Richardson RFPD RF Power Transistor PH3135-90S

Description
Radar Power Transistors
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Description
Radar Power Transistors
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Datasheet
Datasheet Summary
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PH3135-90S is a radar pulsed power transistor designed for 3.1-3.5 GHz operation with 90W output power in 2µs pulses at 10% duty cycle. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. Operated at 36V collector supply, it delivers 16W input power, 7.5 dB power gain, and 35% collector efficiency. The device supports peak collector current of 10.7 A, with collector-emitter breakdown voltage of 65 V and maximum junction temperature of 200°C. Thermal resistance is 0.3 °C/W. It is RoHS compliant and built with gold metallization and diffused emitter ballasting resistors.

Datasheet Summary
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PH3135-90S is a radar pulsed power transistor designed for 3.1-3.5 GHz operation with 90W output power in 2µs pulses at 10% duty cycle. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. Operated at 36V collector supply, it delivers 16W input power, 7.5 dB power gain, and 35% collector efficiency. The device supports peak collector current of 10.7 A, with collector-emitter breakdown voltage of 65 V and maximum junction temperature of 200°C. Thermal resistance is 0.3 °C/W. It is RoHS compliant and built with gold metallization and diffused emitter ballasting resistors.

Suppliers

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Product
Description
Supplier Links
RF Power Transistor - PH3135-90S - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PH3135-90S
RF Power Transistor PH3135-90S
Radar Power Transistors

Radar Power Transistors

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number PH3135-90S
Product Name RF Power Transistor
Package Type Ceramic Flanged
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