MACOM RF Power Transistor PTVA120251EA-V2-R0

Description
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Request a Quote Datasheet
Description
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - PTVA120251EA-V2-R0 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PTVA120251EA-V2-R0
RF Power Transistor PTVA120251EA-V2-R0
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Supplier's Site
RF FETs, MOSFETs - 1465-PTVA120251EA-V2-R0CT-ND - DigiKey
Thief River Falls, MN, United States
RF Mosfet LDMOS 50V 50mA 1.2GHz ~ 1.4GHz 17dB 50W H-36265-2

RF Mosfet LDMOS 50V 50mA 1.2GHz ~ 1.4GHz 17dB 50W H-36265-2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PTVA120251EA-V2-R0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PTVA120251EA-V2-R0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PTVA120251EA-V2-R0
RF MOSFET LDMOS 50V H-36265-2

RF MOSFET LDMOS 50V H-36265-2

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors RF Transistors
Product Number PTVA120251EA-V2-R0 1465-PTVA120251EA-V2-R0CT-ND PTVA120251EA-V2-R0
Product Name RF Power Transistor RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Ceramic Flanged H-36265-2 H-36265-2
Unlock Full Specs
to access all available technical data

Similar Products

DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor - T1G2028536-FS - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-780
Power Gain 19 dB
View Details
2 suppliers
GaAs Fet Switches - KCB817 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 6000 MHz
View Details
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1356053-AIKB30N65DH5ATMA1 - Win Source Electronics
Specs
VCES 650 volts
Package Type SOT3
View Details
6 suppliers