The UF2805B is an N-channel enhancement mode RF power MOSFET transistor designed for 5W operation in the 100-500 MHz frequency range at 28V drain-source voltage. It features a DMOS structure with low input and output capacitances for broadband performance and is configured in a common source arrangement. The device has a drain-source breakdown voltage of 65 V, a maximum power dissipation of 14.4 W, and a thermal resistance of 12.1 °C/W. Typical power gain is 10 dB at 500 MHz with 50% drain efficiency and load mismatch tolerance up to 20:1 VSWR. Input capacitance is 7.0 pF and output capacitance is 5 pF at 28 V and 1 MHz. The operating junction temperature ranges from -55 °C to 200 °C.
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| Richardson RFPD | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | UF2805B |
| Product Name | RF Power Transistor |
| Output Power | 5 watts |