Richardson RFPD RF Power Transistor VRF151G

Description
The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands.
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Description
The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands.
Request a Quote
Datasheet
Datasheet Summary
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The VRF151G is a 50V, 300W RF power vertical MOSFET designed for broadband commercial and military applications up to 175MHz. It features a TO-247 package with dimensions of 1.340 x 0.860 x 0.435 inches and is rated for a maximum drain-source voltage of 170V, continuous drain current of 36A, and junction temperature of 200°C. The device offers 16dB typical gain and 55% efficiency at 175MHz with 500mA quiescent current, and supports 5:1 load VSWR without degradation. It includes nitride passivation, refractory gold metallization, and is RoHS compliant. A beryllium oxide ceramic insulator is present between leads and the mounting flange, requiring careful handling to avoid dust exposure.

Datasheet Summary
Powered by GS/AI

The VRF151G is a 50V, 300W RF power vertical MOSFET designed for broadband commercial and military applications up to 175MHz. It features a TO-247 package with dimensions of 1.340 x 0.860 x 0.435 inches and is rated for a maximum drain-source voltage of 170V, continuous drain current of 36A, and junction temperature of 200°C. The device offers 16dB typical gain and 55% efficiency at 175MHz with 500mA quiescent current, and supports 5:1 load VSWR without degradation. It includes nitride passivation, refractory gold metallization, and is RoHS compliant. A beryllium oxide ceramic insulator is present between leads and the mounting flange, requiring careful handling to avoid dust exposure.

Suppliers

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Supplier Links
RF Power Transistor - VRF151G - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
VRF151G
RF Power Transistor VRF151G
The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands.

The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF MOSFET Transistors
Product Number VRF151G
Product Name RF Power Transistor
Output Power 300 watts
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