Richardson RFPD RF Power Transistor PH2729-110M

Description
Radar Power Transistors
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Description
Radar Power Transistors
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Datasheet
Datasheet Summary
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PH2729-110M is a radar pulsed power transistor designed for 2.7-2.9 GHz operation with 110 W output power at 100 µs pulse width and 10% duty cycle. It is housed in a hermetic metal/ceramic package and operates in common base configuration with internal input and output impedance matching. The device has a collector-emitter voltage rating of 63 V, peak collector current of 8.0 A, and junction temperature rating of 200°C. Thermal resistance is 0.3 °C/W, with power gain of 6.8 dB and collector efficiency of 35% under test conditions. It meets RoHS compliance and has load mismatch tolerance of 2:1 and stability of 1.5:1.

Datasheet Summary
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PH2729-110M is a radar pulsed power transistor designed for 2.7-2.9 GHz operation with 110 W output power at 100 µs pulse width and 10% duty cycle. It is housed in a hermetic metal/ceramic package and operates in common base configuration with internal input and output impedance matching. The device has a collector-emitter voltage rating of 63 V, peak collector current of 8.0 A, and junction temperature rating of 200°C. Thermal resistance is 0.3 °C/W, with power gain of 6.8 dB and collector efficiency of 35% under test conditions. It meets RoHS compliance and has load mismatch tolerance of 2:1 and stability of 1.5:1.

Suppliers

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RF Power Transistor - PH2729-110M - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PH2729-110M
RF Power Transistor PH2729-110M
Radar Power Transistors

Radar Power Transistors

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number PH2729-110M
Product Name RF Power Transistor
Package Type Ceramic Flanged
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