The VRF157FL is a gold-metallized silicon n-channel RF power transistor for broadband commercial and military applications, offering 600W output power with 21dB typical gain at 30MHz and 50V drain bias. It features a flangeless package with four pins: drain, two source, and gate. Maximum drain-source voltage is 170V, continuous drain current is 60A, and total power dissipation is 1350W at 25°C case temperature. Junction-to-case thermal resistance is 0.13°C/W, with a maximum junction temperature of 200°C. The device is RoHS compliant, nitride passivated, and includes refractory gold metallization for ruggedness and low intermodulation distortion. It is compatible with MIL-STD-1311 Version A for IMD measurement. Beryllium oxide ceramic is present in the device and requires careful handling to avoid toxic dust exposure.
The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
| Richardson RFPD | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | VRF157FL |
| Product Name | RF Power Transistor |
| Output Power | 600 watts |
