MACOM RF Power Transistor PTRA087008NB-V1-R5

Description
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Request a Quote
Description
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - PTRA087008NB-V1-R5 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PTRA087008NB-V1-R5
RF Power Transistor PTRA087008NB-V1-R5
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PTRA087008NB-V1-R5 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PTRA087008NB-V1-R5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PTRA087008NB-V1-R5
RF MOSFET LDMOS 48V 6HB2SOF

RF MOSFET LDMOS 48V 6HB2SOF

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category RF Transistors RF Transistors
Product Number PTRA087008NB-V1-R5 PTRA087008NB-V1-R5
Product Name RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Plastic Flangeless Dual, Common Source
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 2735220 - RS Components, Ltd.
Infineon Technologies AG
Specs
TJ 175 C (347 F)
Package Type DirectFET
View Details
9 suppliers
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor - QPD1008 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-360
Power Gain 17 dB
View Details
2 suppliers