The NPTB00004B is a GaN on Si HEMT D-Mode power transistor designed for DC to 6 GHz operation, delivering up to 5 W output power in an industry-standard SOIC-8 plastic package. It operates at 28 V drain bias with drain efficiency up to 63.7% at saturation and 14.8 dB gain at 2.5 GHz. It features an exposed thermal paddle requiring connection to RF and DC ground, and meets RoHS compliance. The case operating temperature range is -40°C to +85°C, and it is classified as HBM Class 1A for ESD sensitivity.
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | NPTB00004D |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
