RF power field effect transistor designed for pulsed applications between 1200 and 1400 MHz with a 1% to 12% duty cycle. The device is housed in a CASE465-06, STYLE1 (NI-780) package with dimensions of 33.91 to 34.16 mm in length, 9.65 to 9.91 mm in width, and 1.45 to 1.70 mm in height. It operates at a maximum drain-source voltage of 100 Vdc and a maximum junction temperature of 225 °C. The transistor is characterized by a typical pulsed output power of 330 W at 1400 MHz with 50 V drain supply, 18 dB power gain, and 60.5% drain efficiency. It is internally matched, features integrated ESD protection, and meets RoHS compliance.
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MRF6V14300HR5 |
| Product Name | RF Power Transistor |
| Package Type | Ceramic Flanged |
