RF Power LDMOS transistor designed for narrowband and broadband applications from 1.8 to 2000 MHz in ISM, broadcast, and aerospace systems, capable of 25 W output power at 50 V drain voltage. Packaged in a TO-270-2 plastic case with the backside as the source terminal. Features extreme ruggedness withstanding VSWR >65:1 at 50 V without degradation, integrated stability enhancements, low thermal resistance of 1.2 °C/W, and ESD protection meeting Human Body Model Class 2 (2500 V), Machine Model Class B (250 V), and Charge Device Model IV (2000 V).
RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale.s enhanced ruggedness platform and is suitable for use in applications where High VSWRs are encountered.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MRFE6VS25NR1 |
| Product Name | RF Power Transistor |
| Package Type | Plastic Flangeless |
