Richardson RFPD RF Power Transistor MRFE6VP6300HR5

Description
The MRFE6VP6300HR5 is an extremely rugged 300W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation, high gain, high efficiency, very low
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Description
The MRFE6VP6300HR5 is an extremely rugged 300W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation, high gain, high efficiency, very low
Request a Quote
Datasheet
Datasheet Summary
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The MRFE6VP6300H series is a 300W CW, 50V LDMOS RF power transistor designed for broadband operation from 1.8 to 600 MHz in industrial, broadcast, aerospace, and land mobile applications. It features unmatched input and output for wide frequency use, capable of withstanding a 65:1 VSWR load mismatch at 50 Vdc and 230 MHz. The device is packaged in an NI-780-4 or NI-780S-4 case, rated for a maximum junction temperature of 225°C, with a thermal resistance from junction to case of 0.19°C/W under CW operation. It meets RoHS compliance and is qualified for up to 50 VDD operation. The part supports single-ended or push-pull configurations and includes integrated ESD protection compliant with Human Body Model Class 2, Machine Model B, and Charge Device Model IV.

Datasheet Summary
Powered by GS/AI

The MRFE6VP6300H series is a 300W CW, 50V LDMOS RF power transistor designed for broadband operation from 1.8 to 600 MHz in industrial, broadcast, aerospace, and land mobile applications. It features unmatched input and output for wide frequency use, capable of withstanding a 65:1 VSWR load mismatch at 50 Vdc and 230 MHz. The device is packaged in an NI-780-4 or NI-780S-4 case, rated for a maximum junction temperature of 225°C, with a thermal resistance from junction to case of 0.19°C/W under CW operation. It meets RoHS compliance and is qualified for up to 50 VDD operation. The part supports single-ended or push-pull configurations and includes integrated ESD protection compliant with Human Body Model Class 2, Machine Model B, and Charge Device Model IV.

Suppliers

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Product
Description
Supplier Links
RF Power Transistor - MRFE6VP6300HR5 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRFE6VP6300HR5
RF Power Transistor MRFE6VP6300HR5
The MRFE6VP6300HR5 is an extremely rugged 300W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation, high gain, high efficiency, very low

The MRFE6VP6300HR5 is an extremely rugged 300W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation, high gain, high efficiency, very low

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number MRFE6VP6300HR5
Product Name RF Power Transistor
Package Type Ceramic Flanged
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