The NPT2018 is a 12.5 W GaN on Si HEMT wideband transistor designed for DC to 3.5 GHz operation in linear and saturated applications. It is housed in a 3 x 6 mm, 14-lead PDFN package with an exposed thermal pad requiring connection to RF and DC ground. The device operates at 50 V drain supply and achieves 16 dB gain and 56% drain efficiency at 2.5 GHz. It meets RoHS standards and is rated for operation from -40°C to +85°C with a maximum channel temperature of +225°C. The package complies with JEDEC moisture sensitivity level 3 and features Ni/Pd/Au plating.
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W (41 dBm) in an industry standard surface mount plastic package.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | NPT2018 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
