The TA9310E is a 20 W CW GaN power transistor designed for operation from 30 MHz to 4.0 GHz in applications such as private mobile radio, public safety, and cellular infrastructure. It is packaged in an 8-pin 5 × 6 × 0.75 mm DFN package with a bottom-side thermal paddle requiring direct grounding and adequate heat sinking. The device operates with a drain voltage of 28-32 V, achieves a power added efficiency greater than 55% at 900 MHz, and maintains a peak saturated output power of 44 dBm. Absolute maximum junction temperature is +225 °C, with operating temperature range from -40 °C to +85 °C. Thermal resistance from junction to case is 4.9 °C/W. The part is RoHS, REACH, and halogen free compliant.
The TA9310E is a broadband GaN power transistor capable of delivering 20W CW from 500MHz to 4.0GHz frequency band. The transistor can be used at lower frequencies with reduced output power. The input and output can be matched for best power and efficiency for the desired band.
The TA9310E is packaged in a compact, low cost Quad Flat No lead (QFN) 5x6x0.8mm, 8 leads plastic package.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | TA9310E |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
