Richardson RFPD RF Power Transistor MRF158

Description
Designed for wideband large-signal amplifier and oscillator applications to 500 MHz.
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Description
Designed for wideband large-signal amplifier and oscillator applications to 500 MHz.
Request a Quote
Datasheet
Datasheet Summary
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The MRF158 is an N-channel enhancement mode RF power transistor designed for wideband large-signal amplifier and oscillator applications up to 500 MHz, with guaranteed performance at 28 V, delivering 2.0 W output power, minimum 16 dB gain, and 55% typ. efficiency. It is tested for load mismatch at all phase angles with a 30:1 VSWR and is suited for Class A operation. The device supports manual gain control, ALC, and modulation techniques.

Datasheet Summary
Powered by GS/AI

The MRF158 is an N-channel enhancement mode RF power transistor designed for wideband large-signal amplifier and oscillator applications up to 500 MHz, with guaranteed performance at 28 V, delivering 2.0 W output power, minimum 16 dB gain, and 55% typ. efficiency. It is tested for load mismatch at all phase angles with a 30:1 VSWR and is suited for Class A operation. The device supports manual gain control, ALC, and modulation techniques.

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - MRF158 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF158
RF Power Transistor MRF158
Designed for wideband large-signal amplifier and oscillator applications to 500 MHz.

Designed for wideband large-signal amplifier and oscillator applications to 500 MHz.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF MOSFET Transistors
Product Number MRF158
Product Name RF Power Transistor
Output Power 2 watts
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