WST33H0NC is a 300W packaged, partially-matched transistor utilizing high performance, 50V, 0.25um GaN on SiC production process. The WST33H0NC operates from 2.4-2.5 GHz and targets microwave heating applications. Under class-C operation, the WST33H0NC typically achieves 300 W of saturated output power with 14 dB of large signal gain and 75% drain efficiency via a 2.4-2.5 GHz reference design. Available in a thermally-enhanced, Cu-based package, the WST33H0NC provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next-generation systems.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | WST33H0NC |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
