The MAGX-100027-050C0P is a 50 W GaN on Silicon HEMT D-mode amplifier for DC to 2700 MHz operation, housed in a TO-272S-2 plastic package with an exposed thermal pad. It operates at 50 V drain-source voltage, supports CW and pulsed modes with 100 µs pulse width and 10% duty cycle, and achieves up to 79.7% drain efficiency. The device is rated for channel temperatures up to 225°C, features 100% RF testing, and is RoHS compliant. It is designed for applications in military radio, cellular infrastructure, avionics, and radar systems.
The MAGX-100027-050C0P is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak output power levels to 50 W (47 dBm) in a plastic package.
The MAGX-100027-050C0P is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MAGX-100027-050C0P |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
