The NPT25015D is a gallium nitride HEMT power transistor designed for DC to 3 GHz operation in applications such as defense communications, wireless infrastructure, and radar. It is housed in a thermally-enhanced surface mount plastic package measuring 4.80 to 4.98 mm by 3.81 to 3.99 mm, with an exposed drain paddle requiring connection to RF and DC ground for thermal and electrical performance. The device delivers 23 W peak envelope power and 1.5 W linear output power at 23.5% efficiency under single-carrier OFDM conditions. It operates with a 28 V drain supply and is rated for a junction temperature up to +200°C, with a thermal resistance of 6.25 °C/W. The part is lead-free, RoHS compliant, and categorized as HBM Class 1A for ESD sensitivity.
Gallium Nitride 28V, 23W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | NPT25015D |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
