The MRF1K50GN is a high-ruggedness N-channel LDMOS transistor for RF power amplification from 1.8 to 500 MHz in industrial, broadcast, and mobile radio applications. It is packaged in the OM-1230G-4L plastic case with an exposed source terminal. The device operates at 50 Vdc and delivers 1500 W peak output at 230 MHz under 100 μsec, 20% duty cycle pulses, with 23.0 dB typical gain and 73.0% efficiency. It features unmatched input and output for broadband use, integrated ESD protection, and operates with a junction temperature up to +225 °C. Junction-to-case thermal resistance is 0.068 °C/W. ESD immunity meets JESD22-A114 (2500 V) and JESD22-C101 (2000 V).
This high ruggedness device, MRF1K50GNR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MRF1K50GNR5 |
| Product Name | RF Power Transistor |
| Package Type | Plastic Gull Wing |
