Richardson RFPD RF Power Transistor LF2805A

The LF2805A is an N-channel enhancement mode RF power MOSFET transistor designed for broadband linear operation from 500 MHz to 1400 MHz at 28 V supply voltage. It is packaged in a case with dimensions of 20.70 to 20.96 mm in length, 14.35 to 14.61 mm in width, and 13.72 to 14.22 mm in height, with a thermal resistance from junction to case of 12.1 °C/W. It operates with a maximum drain-source voltage of 65 V, gate-source voltage of 20 V, and power dissipation of 14.4 W. The device delivers 5 W output power at 1 GHz with 50% drain efficiency and 10 dB power gain, and tolerates a load VSWR up to 20:1. It is RoHS compliant and features low input and output capacitances for broadband performance.