Tagore Technology, Inc. RF Power Transistor TA9210D

Description
The TA9210D is a broadband capable 12.5W GaN on Silicon power transistor covering 30MHz to 2.7GHz frequency band with a single match. TA9210D is usable upto 4GHz. The input and output can be matched for best power and efficiency for the desired band. The TA9210D is packaged in a compact, low cost Quad Flat No lead (QFN) 3x6x0.8mm, 32 leads plastic package.
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Description
The TA9210D is a broadband capable 12.5W GaN on Silicon power transistor covering 30MHz to 2.7GHz frequency band with a single match. TA9210D is usable upto 4GHz. The input and output can be matched for best power and efficiency for the desired band. The TA9210D is packaged in a compact, low cost Quad Flat No lead (QFN) 3x6x0.8mm, 32 leads plastic package.
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Datasheet
Datasheet Summary
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The TA9210D is a 12.5W GaN power transistor designed for broadband operation from 30 MHz to 4.0 GHz with a single match, suitable for applications such as public safety radios and cellular infrastructure. It is packaged in a 32-pin 3.0 × 6.0 × 0.75 mm QFN package with a bottom-side thermal paddle that must be grounded for proper operation. The device operates with a drain voltage of 28 to 32 V, delivers 41.5 dBm power at 800 MHz, and achieves greater than 55% power added efficiency. It supports an operating temperature range of -40 to +85 °C and meets RoHS and REACH compliance standards.

Datasheet Summary
Powered by GS/AI

The TA9210D is a 12.5W GaN power transistor designed for broadband operation from 30 MHz to 4.0 GHz with a single match, suitable for applications such as public safety radios and cellular infrastructure. It is packaged in a 32-pin 3.0 × 6.0 × 0.75 mm QFN package with a bottom-side thermal paddle that must be grounded for proper operation. The device operates with a drain voltage of 28 to 32 V, delivers 41.5 dBm power at 800 MHz, and achieves greater than 55% power added efficiency. It supports an operating temperature range of -40 to +85 °C and meets RoHS and REACH compliance standards.

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - TA9210D - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
TA9210D
RF Power Transistor TA9210D
The TA9210D is a broadband capable 12.5W GaN on Silicon power transistor covering 30MHz to 2.7GHz frequency band with a single match. TA9210D is usable upto 4GHz. The input and output can be matched for best power and efficiency for the desired band. The TA9210D is packaged in a compact, low cost Quad Flat No lead (QFN) 3x6x0.8mm, 32 leads plastic package.

The TA9210D is a broadband capable 12.5W GaN on Silicon power transistor covering 30MHz to 2.7GHz frequency band with a single match. TA9210D is usable upto 4GHz. The input and output can be matched for best power and efficiency for the desired band.

The TA9210D is packaged in a compact, low cost Quad Flat No lead (QFN) 3x6x0.8mm, 32 leads plastic package.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number TA9210D
Product Name RF Power Transistor
Transistor Technology / Material GaN
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