Richardson RFPD RF Power Transistor PH2729-65M

Description
Radar Power Transistors
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Description
Radar Power Transistors
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Datasheet
Datasheet Summary
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PH2729-65M is a 65W radar pulsed power transistor designed for 2.7-2.9 GHz operation with a 100 µs pulse width and 10% duty cycle. It features a hermetic metal/ceramic package, NPN silicon construction in a common base configuration, and internal input and output impedance matching. The device operates with a collector-emitter voltage up to 65 V, peak collector current of 8.0 A, and junction temperature up to 200 °C. Thermal resistance is 0.45 °C/W at 36 V supply and 65 W output power. Power gain is 8.5 dB, collector efficiency is 40%, and input return loss is -9 dB. It is RoHS compliant.

Datasheet Summary
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PH2729-65M is a 65W radar pulsed power transistor designed for 2.7-2.9 GHz operation with a 100 µs pulse width and 10% duty cycle. It features a hermetic metal/ceramic package, NPN silicon construction in a common base configuration, and internal input and output impedance matching. The device operates with a collector-emitter voltage up to 65 V, peak collector current of 8.0 A, and junction temperature up to 200 °C. Thermal resistance is 0.45 °C/W at 36 V supply and 65 W output power. Power gain is 8.5 dB, collector efficiency is 40%, and input return loss is -9 dB. It is RoHS compliant.

Suppliers

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Product
Description
Supplier Links
RF Power Transistor - PH2729-65M - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PH2729-65M
RF Power Transistor PH2729-65M
Radar Power Transistors

Radar Power Transistors

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number PH2729-65M
Product Name RF Power Transistor
Package Type Ceramic Flanged
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