Wolfspeed Silicon Carbide Diode C4D40120H

Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Industrial Switched Mode Power Supplies Uninterruptible and AUX Power Supplies Boost for PFC and DC-DC Stages Solar Inverters
  • Silicon Carbide Diode - C4D40120H - Richardson RFPD
    Richardson RFPD
  • Single Diodes - 1697-C4D40120H-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Diodes - Rectifiers - C4D40120H - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Industrial Switched Mode Power Supplies Uninterruptible and AUX Power Supplies Boost for PFC and DC-DC Stages Solar Inverters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Diode - C4D40120H - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide Diode
C4D40120H
Silicon Carbide Diode C4D40120H
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Industrial Switched Mode Power Supplies Uninterruptible and AUX Power Supplies Boost for PFC and DC-DC Stages Solar Inverters

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.

Features

  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
  • Zero Reverse Recovery Current / Forward Recovery Voltage
  • Temperature-Independent Switching Behavior

Applications

  • Industrial Switched Mode Power Supplies
  • Uninterruptible and AUX Power Supplies
  • Boost for PFC and DC-DC Stages
  • Solar Inverters
Supplier's Site Datasheet
Single Diodes - 1697-C4D40120H-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
1697-C4D40120H-ND
Single Diodes 1697-C4D40120H-ND
Diode Silicon Carbide Schottky 1200V 128A (DC) Through Hole TO-247-2

Diode Silicon Carbide Schottky 1200V 128A (DC) Through Hole TO-247-2

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - C4D40120H - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - Rectifiers
C4D40120H
Discrete Semiconductor Products - Diodes - Rectifiers C4D40120H
DIODE SIL CARB 1.2KV 128A TO247

DIODE SIL CARB 1.2KV 128A TO247

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Diodes Diodes Rectifiers
Product Number C4D40120H 1697-C4D40120H-ND C4D40120H
Product Name Silicon Carbide Diode Single Diodes Discrete Semiconductor Products - Diodes - Rectifiers
Diode Type Silicon Carbide Diode
IF 40000 mA
Tj -55 to 175 C (-67 to 347 F)
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