Wolfspeed Silicon Carbide Diode C6D06065Q-TR

Description
6th Generation 650 V, 6 A Silicon Carbide Schottky Diode With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Low Profile Package with Low Inductance Applications Enterprise Power, Server, & Telecom Power Supplies Switched Mode Power Supplies Industrial Power Supplies Boost Power Factor Correction Bootstrap Diode LLC Clamping
  • Silicon Carbide Diode - C6D06065Q-TR - Richardson RFPD
    Richardson RFPD
  • Single Diodes - 1697-C6D06065Q-TRDKR-ND - DigiKey
    DigiKey
  • Single Diodes - 1697-C6D06065Q-TR-ND - DigiKey
    DigiKey
  • Single Diodes - 1697-C6D06065Q-TRCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Diodes - Rectifiers - C6D06065Q-TR - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
6th Generation 650 V, 6 A Silicon Carbide Schottky Diode With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Low Profile Package with Low Inductance Applications Enterprise Power, Server, & Telecom Power Supplies Switched Mode Power Supplies Industrial Power Supplies Boost Power Factor Correction Bootstrap Diode LLC Clamping
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Diode - C6D06065Q-TR - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide Diode
C6D06065Q-TR
Silicon Carbide Diode C6D06065Q-TR
6th Generation 650 V, 6 A Silicon Carbide Schottky Diode With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Low Profile Package with Low Inductance Applications Enterprise Power, Server, & Telecom Power Supplies Switched Mode Power Supplies Industrial Power Supplies Boost Power Factor Correction Bootstrap Diode LLC Clamping

6th Generation 650 V, 6 A Silicon Carbide Schottky Diode

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.

Features

  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
  • Zero Reverse Recovery Current / Forward Recovery Voltage
  • Temperature-Independent Switching Behavior
  • Low Profile Package with Low Inductance

Applications

  • Enterprise Power, Server, & Telecom Power Supplies
  • Switched Mode Power Supplies
  • Industrial Power Supplies
  • Boost Power Factor Correction
  • Bootstrap Diode
  • LLC Clamping
Supplier's Site Datasheet
Single Diodes - 1697-C6D06065Q-TRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
1697-C6D06065Q-TRDKR-ND
Single Diodes 1697-C6D06065Q-TRDKR-ND
Diode Silicon Carbide Schottky 650V 21A (DC) Surface Mount 4-QFN (8x8)

Diode Silicon Carbide Schottky 650V 21A (DC) Surface Mount 4-QFN (8x8)

Buy Now Datasheet
Single Diodes - 1697-C6D06065Q-TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
1697-C6D06065Q-TR-ND
Single Diodes 1697-C6D06065Q-TR-ND
Diode Silicon Carbide Schottky 650V 21A (DC) Surface Mount 4-QFN (8x8)

Diode Silicon Carbide Schottky 650V 21A (DC) Surface Mount 4-QFN (8x8)

Buy Now Datasheet
Single Diodes - 1697-C6D06065Q-TRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
1697-C6D06065Q-TRCT-ND
Single Diodes 1697-C6D06065Q-TRCT-ND
Diode Silicon Carbide Schottky 650V 21A (DC) Surface Mount 4-QFN (8x8)

Diode Silicon Carbide Schottky 650V 21A (DC) Surface Mount 4-QFN (8x8)

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - C6D06065Q-TR - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - Rectifiers
C6D06065Q-TR
Discrete Semiconductor Products - Diodes - Rectifiers C6D06065Q-TR
DIODE SIL CARBIDE 650V 21A 4QFN

DIODE SIL CARBIDE 650V 21A 4QFN

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Diodes Diodes Rectifiers
Product Number C6D06065Q-TR 1697-C6D06065Q-TRDKR-ND C6D06065Q-TR
Product Name Silicon Carbide Diode Single Diodes Discrete Semiconductor Products - Diodes - Rectifiers
Diode Type Silicon Carbide Diode
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