Wolfspeed 20-A, 1200-V, Z-Rec® Schottky, TO-220-2 package C4D20120A

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.

Features

• Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
• Zero Reverse Recovery Current / Forward Recovery Voltage
• Temperature-Independent Switching Behavior

Applications

• Industrial Switched Mode Power Supplies
• Uninterruptible and AUX Power Supplies
• Boost for PFC and DC-DC Stages
• Solar Inverters

Manufacturer: Cree/Wolfspeed
Win Source Part Number: 1027375-C4D20120A
Packaging: Tube/Rail
Mounting: Through Hole
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200μA @ 1200V
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Operating Temperature - Junction: -55°C to 175°C
Family Name: C4D20120A
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-220-2
Speed(Frequency): No Recovery Time > 500mA (Io)
Alternative Parts (Cross-Reference): IDH10G120C5; SCS220KGC; SCS220KGHRC; SCS120KGC;
Introduction Date: September 02, 2015
ECCN: ERA99
Country of Origin: China, Philippines, United States of America
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Diode Silicon Carbide Schottky 1200V 54.5A (DC) Through Hole TO-220-2