Wolfspeed Silicon Carbide Diode C6D10065E

Description
Features New 6th Generation Technology Low Forward Voltage Drop (VF) Zero Reverse Recovery Current Zero Forward Recovery Voltage Low Leakage Current (Ir) Temperature-Independ ent Switching Behavior Positive Temperature Coefficient on VF Benefits Higher System Level Efficiency Increase System Power Density Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Switch Mode Power Supplies (SMPS) Server/Telecom Power Supplies Industrial Power Supplies Solar UPS
  • Silicon Carbide Diode - C6D10065E - Richardson RFPD
    Richardson RFPD
  • Single Diodes - 1697-C6D10065E-ND - DigiKey
    DigiKey
  • Single Diodes - C6D10065E - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Diodes - Rectifiers - C6D10065E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features New 6th Generation Technology Low Forward Voltage Drop (VF) Zero Reverse Recovery Current Zero Forward Recovery Voltage Low Leakage Current (Ir) Temperature-Independ ent Switching Behavior Positive Temperature Coefficient on VF Benefits Higher System Level Efficiency Increase System Power Density Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Switch Mode Power Supplies (SMPS) Server/Telecom Power Supplies Industrial Power Supplies Solar UPS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Diode - C6D10065E - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide Diode
C6D10065E
Silicon Carbide Diode C6D10065E
Features New 6th Generation Technology Low Forward Voltage Drop (VF) Zero Reverse Recovery Current Zero Forward Recovery Voltage Low Leakage Current (Ir) Temperature-Independ ent Switching Behavior Positive Temperature Coefficient on VF Benefits Higher System Level Efficiency Increase System Power Density Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Switch Mode Power Supplies (SMPS) Server/Telecom Power Supplies Industrial Power Supplies Solar UPS

Features

  • New 6th Generation Technology
  • Low Forward Voltage Drop (VF)
  • Zero Reverse Recovery Current
  • Zero Forward Recovery Voltage
  • Low Leakage Current (Ir)
  • Temperature-Independent Switching Behavior
  • Positive Temperature Coefficient on VF

Benefits

  • Higher System Level Efficiency
  • Increase System Power Density
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway

Applications

  • Switch Mode Power Supplies (SMPS)
  • Server/Telecom Power Supplies
  • Industrial Power Supplies
  • Solar
  • UPS
Supplier's Site Datasheet
Single Diodes - 1697-C6D10065E-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
1697-C6D10065E-ND
Single Diodes 1697-C6D10065E-ND
Diode Silicon Carbide Schottky 650V 35A (DC) Surface Mount TO-252-2

Diode Silicon Carbide Schottky 650V 35A (DC) Surface Mount TO-252-2

Buy Now Datasheet
Single Diodes - C6D10065E - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Diodes
C6D10065E
Single Diodes C6D10065E
DIODE SIL CARB 650V 35A TO252-2

DIODE SIL CARB 650V 35A TO252-2

Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - C6D10065E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - Rectifiers
C6D10065E
Discrete Semiconductor Products - Diodes - Rectifiers C6D10065E
DIODE SIL CARB 650V 35A TO252-2

DIODE SIL CARB 650V 35A TO252-2

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Diodes Diodes Diodes Rectifiers
Product Number C6D10065E 1697-C6D10065E-ND C6D10065E C6D10065E
Product Name Silicon Carbide Diode Single Diodes Single Diodes Discrete Semiconductor Products - Diodes - Rectifiers
Diode Type Silicon Carbide Diode
IF 10000 mA
Tj -55 to 175 C (-67 to 347 F)
VF 1.5 volts 1.5 volts
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