With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
Features
Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
Zero Reverse Recovery Current / Forward Recovery Voltage
Temperature-Independ
ent Switching Behavior
Low Leakage Current (IR)
Applications
Industrial Power Supplies
Switch Mode Power Supplies
Server / Telecom Power Supplies
Power Factor Correction
Solar Inverter
Uninterruptible Power Supply
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
Features
- Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
- Zero Reverse Recovery Current / Forward Recovery Voltage
- Temperature-Independent Switching Behavior
- Low Leakage Current (IR)
Applications
- Industrial Power Supplies
- Switch Mode Power Supplies
- Server / Telecom Power Supplies
- Power Factor Correction
- Solar Inverter
- Uninterruptible Power Supply
