Richardson RFPD Datasheets for Diodes
Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
Diodes: Learn more
| Product Name | Notes |
|---|---|
| Features Low forward voltage Low leakage current No reverse recovery Avalanche energy rated RoHS compliant Benefits High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased... | |
| Features No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Benefits High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased... | |
| Features No reverse recovery Low forward voltage Low leakage current Avalanche-energy rated RoHS compliant Benefits High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very low stray inductance Benefits Outstanding performance at high-frequency... | |
| A broadband, high linearity, medium power series switch element in a 2.0 x 1.3 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other wireless infrastructure... | |
| A broadband, high linearity, medium power shuntswitch element in a 2.6 x 1.5 mm DFN package. This PIN diode switch element is designed forwireless telecommunications infrastructure and testinstrument applications. It... | |
| Applications Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on... | |
| Axial Lead Diode. Standard silicon rectifier diode. | |
| Features Low forward voltage Low leakage current No reverse recovery current/no forward recovery RoHS compliant Benefits Higher reliability systems Minimizes heat sink requirements Higher efficiency Applications H/EV powertrain and EV... | |
| Features Low forward voltage Low leakage current No reverse recovery/no forward recovery Avalanche energy rated RoHS compliant Benefits High switching frequency Low switching losses Low noise (EMI) switching Higher reliability... | |
| Features No reverse recovery/no forward recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Benefits High switching frequency Low switching losses Low noise (EMI) switching Higher reliability... | |
| Features No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Benefits High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased... | |
| Features No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Isolated voltage to 2500 V Benefits Outstanding performance at high-frequency operation Direct mounting to heatsink... | |
| Features No reverse recovery Low forward voltage Low leakage current Avalanche-energy rated RoHS compliant Benefits High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system... | |
| Features No reverse recovery Low forward voltage Low leakage current Avalanche-energy rated RoHS compliant Isolated voltage to 2500 V Benefits High switching frequency Low switching losses Low noise (EMI) switching... | |
| Features SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF High Blocking voltage AlN substrate for improved thermal performance Benefits Outstanding... | |
| Features SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF High Blocking voltage Very low stray inductance AlN substrate for improved... | |
| Features SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF M5 power connectors AlN substrate for improved thermal performance Benefits Outstanding... | |
| Features SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF M5 power connectors AlN substrate for improved thermal performance Benefits Stable... | |
| Features SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF M5 power connectors Low stray inductance AlN substrate for improved thermal... | |
| Features SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF Very Low stray inductance High level of integration Benefits Outstanding performance... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF High blocking voltage Low stray inductance M5 power connectors... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF High blocking voltage Very low stray inductance Aluminum Nitride... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Low stray inductance M5 power connectors High Level of... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF M5 power connectors Aluminum nitride (AlN) substrate for improved... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very low stray inductance Benefits Outstanding performance at high-frequency... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very low stray inductance M5 power connectors High level... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF High blocking voltage Low stray inductance M5 power connectors... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF High blocking voltage Very low stray inductance Aluminum Nitride... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Low stray inductance M5 power connectors High level of... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF M5 power connectors Aluminum nitride (AlN) substrate for improved... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration Benefits... | |
| Features Ultra-fast recovery times Soft recovery characteristics Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Benefits High switching frequency Low switching losses Low noise (EMI) switching Higher... | |
| Features Zero recovery characteristics Low forward voltage Low leakage current Avalanche-energy rated RoHS compliant Benefits High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system... | |
| Glass Passivated Rectifier Diode Module | |
| Glass Passivated Rectifier Diode Modules | |
| Glass Passivated Three Phase Bridge Rectifiers | |
| Glass Passivated Three Phase Rectifier Bridge | |
| M/A-COM Technology Solutions’ MAVR-000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and... | |
| Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in... | |
| Minibridge® 25, 40, 50 and 60 Amperes Bridge Rectifiers|•Integral ly molded heat sinks provide very low thermal resistance|•UL Recognized | |
| Minibridge® 27.5 Amperes Three-Phase Full-Wave Bridge|•Heat Sink|•Chassis Mounting|•UL Recognized | |
| Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. POW-R-BLOK™ | |
| Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. POW-R-BLOKTM... | |
| Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. | |
| Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. | |
| Powerex Three-Phase Diode Bridge Modules are designed for use in three-phase bridge application. The modules are isolated consisting of six rectifier diodes. These ME70 Modules have been tested and recognized... | |
| Powerex Three-Phase Diode Bridge Modules are designed for use in three-phase bridge application. The modules are isolated consisting of six rectifier diodes. | |
| Powerex Three-Phase Diode Bridge Modules are designed for use in three-phase bridge applications. The modules are isolated consisting of six rectifier diodes. | |
| Powerex Three-Phase Diode BridgeModules are designed for use in three phase bridge applications. The modulesare isolated consisting of six rectifier diodes. These ME70 Modules have been testedand recognized by Underwriters... | |
| Rectifier Diode Modules | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Schottky Limiter DC-6 GHz. The MADS-011010 is a Schottky limiter assembled in a lead-free 1.5 x 1.2 mm TDFN surface mount plastic package. This device provides broadband performance as well... | |
| Single Diode Configuration: MACOM offers four families of low cost surface mount gallium arsenide tuning varactors. All families have silicon nitride protected junctions for low leakage current and high reliability. | |
| Single Diode Configuration: MACOM's MA45400 series is a highly repeatable, UHCVD/ion-implanted, abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for general... | |
| Single Diode Configuration: MACOM's MA46H120 series is a gallium arsenide flip chip hyper abrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high... | |
| Single Diode Configuration: MACOM's MA4ST1200 series is a highly repeatable, UHCVD/ion-implanted, hyper abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for... | |
| Single Diode Configuration: The MA46450 series of tuning varactors are hyperabrupt junction Gallium Arsenide diodes featuring constant gamma 1.0. These diodes offer high Q (up to 4000) permitting excellent tuning... | |
| Single Diode Configuration: The MA4ST079 through MA4ST083 series of silicon hyperabrupt junction tuning varactors is produced with ion implantation and advanced epitaxial growth techniques. These diodes have thermal oxide passivation,... | |
| Single Diode Configuration: The MA4ST1300 series is a highly repeatable, UHCVD/ion-implanted, hyperabrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for high... | |
| Single Diode Configuration: The MA4ST200 series is a ion-implanted, hyperabrupt junction, silicon tuning varactors in surface mount packages. This series of varactors is designed for high Q and low voltage... | |
| Single Diode Configuration: The MA4ST300 series are ion-implanted, hyper abrupt junction, silicon tuning varactors in SC79, SC70 3LD, and SOD-323 surface mount packages. This series of varactors is designed for... | |
| Single Diode Configuration: The MA4ST400 series are ion-implanted, hyperabrupt junction, silicon tuning varactors in the SOT-23 surface mount package. These thermal oxide passivated diodes feature high capacitance ratio and quality... | |
| The MADZ-011001 is a terahertz cutoff frequency,gallium arsenide flip chip Schottky barrier diode. Thisdiode is fabricated on a OMCVD epitaxial waferusing a process designed for high device uniformityand extremely low... | |
| The MADZ-011004, reverse tee, is a gallium arsenide flip chip THz Schottky barrier diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity... | |
| The MAVR-011020-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low... | |
| The MLP71xx Series limiter diodes are specially processed PIN diodes with thin intrinsic regions designed for use in passive or active limiters from 100 MHz to beyond 20 GHz. The... | |
| The MMP4400 series are high-voltage, high-power (cathode base) PIN diodes. These high-resistivity silicon devices are glass passivated for high stability and reliability, and have been proven by thousands of device... | |
| The MPS4101-6LP is a QFN-packaged series/shunt element. The parasitic inductance is minimized in this design resulting in wide-band, low-loss, high-isolation performance. | |
| The MSWSE-020-05 is a SPST PIN diode switchelement designed for medium incident powerapplications, up to 20 W CW. It has low insertionloss and medium isolation below 0.5 GHz. | |
| The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. | |
| The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. | |
| The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering your total cost of ownership for high voltage... | |
| The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high voltage... | |
| The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high-voltage applications. | |
| This series of surface mount PIN and Limiter diodes utilize new and unique monolithic MMSM technology. The technology is a package/device integration accomplished at the wafer fabrication level. Since the... | |
| This silicon diode is packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels. It is suitable for commercial switching along... |
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