With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
Features
Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
Zero Reverse Recovery Current / Forward Recovery Voltage
Temperature-Independ
ent Switching Behavior
Applications
Industrial Switched Mode Power Supplies
Uninterruptible and AUX Power Supplies
Boost for PFC and DC-DC Stages
Solar Inverters
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
Features
- Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
- Zero Reverse Recovery Current / Forward Recovery Voltage
- Temperature-Independent Switching Behavior
Applications
- Industrial Switched Mode Power Supplies
- Uninterruptible and AUX Power Supplies
- Boost for PFC and DC-DC Stages
- Solar Inverters
