Wolfspeed Silicon Carbide Diode C6D20065A

Description
Fully qualified to the Industrial JEDEC standard. With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Industrial Switched Mode Power Supplies Uninterruptible and AUX Power Supplies Boost for PFC and DC-DC Stages Solar Inverters
Request a Quote Datasheet
Description
Fully qualified to the Industrial JEDEC standard. With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Industrial Switched Mode Power Supplies Uninterruptible and AUX Power Supplies Boost for PFC and DC-DC Stages Solar Inverters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Diode - C6D20065A - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide Diode
C6D20065A
Silicon Carbide Diode C6D20065A
Fully qualified to the Industrial JEDEC standard. With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Industrial Switched Mode Power Supplies Uninterruptible and AUX Power Supplies Boost for PFC and DC-DC Stages Solar Inverters

Fully qualified to the Industrial JEDEC standard.

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.

Features

  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
  • Zero Reverse Recovery Current / Forward Recovery Voltage
  • Temperature-Independent Switching Behavior

Applications

  • Industrial Switched Mode Power Supplies
  • Uninterruptible and AUX Power Supplies
  • Boost for PFC and DC-DC Stages
  • Solar Inverters
Supplier's Site Datasheet
Single Diodes - 1697-C6D20065A-ND - DigiKey
Thief River Falls, MN, United States
Single Diodes
1697-C6D20065A-ND
Single Diodes 1697-C6D20065A-ND
DIODE SIL CARB 650V 66A TO220-2

DIODE SIL CARB 650V 66A TO220-2

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - C6D20065A - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - Rectifiers
C6D20065A
Discrete Semiconductor Products - Diodes - Rectifiers C6D20065A
DIODE SIL CARB 650V 66A TO220-2

DIODE SIL CARB 650V 66A TO220-2

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Diodes Diodes Rectifiers
Product Number C6D20065A 1697-C6D20065A-ND C6D20065A
Product Name Silicon Carbide Diode Single Diodes Discrete Semiconductor Products - Diodes - Rectifiers
Diode Type Silicon Carbide Diode
IF 20000 mA
Tj -55 to 175 C (-67 to 347 F)
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