Wolfspeed 10-A, 650-V, Z-Rec® Schottky, TO-252-2 package C3D10065E

Description
Benefits Replace bipolar with unipolar rectifiers Essentially no switching losses Higher efficiency Reduction of heat-sink requirements Parallel devices without thermal runaway Features 650-volt Schottky rectifier Optimized for PFC boost diode applications Zero reverse recovery current Zero forward recovery voltage High-frequency operation Temperature-independ ent switching behavior Extremely fast switching Positive temperature coefficient on VF All products with part number C3D10065E-TR are shipped as tape & reel in accordance with JEDEC specifications for MSL3 classification.
  • 10-A, 650-V, Z-Rec® Schottky, TO-252-2 package - C3D10065E - Wolfspeed
    Wolfspeed
  • Silicon Carbide Diode - C3D10065E - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - 134186-C3D10065E - Win Source Electronics
    Win Source Electronics
  • Single Diodes - C3D10065E-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Diodes - Rectifiers - C3D10065E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Benefits Replace bipolar with unipolar rectifiers Essentially no switching losses Higher efficiency Reduction of heat-sink requirements Parallel devices without thermal runaway Features 650-volt Schottky rectifier Optimized for PFC boost diode applications Zero reverse recovery current Zero forward recovery voltage High-frequency operation Temperature-independ ent switching behavior Extremely fast switching Positive temperature coefficient on VF All products with part number C3D10065E-TR are shipped as tape & reel in accordance with JEDEC specifications for MSL3 classification.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
10-A, 650-V, Z-Rec® Schottky, TO-252-2 package - C3D10065E - Wolfspeed
Wolfspeed
Durham, NC, United States
10-A, 650-V, Z-Rec® Schottky, TO-252-2 package
C3D10065E
10-A, 650-V, Z-Rec® Schottky, TO-252-2 package C3D10065E
Benefits Replace bipolar with unipolar rectifiers Essentially no switching losses Higher efficiency Reduction of heat-sink requirements Parallel devices without thermal runaway Features 650-volt Schottky rectifier Optimized for PFC boost diode applications Zero reverse recovery current Zero forward recovery voltage High-frequency operation Temperature-independ ent switching behavior Extremely fast switching Positive temperature coefficient on VF All products with part number C3D10065E-TR are shipped as tape & reel in accordance with JEDEC specifications for MSL3 classification.

Benefits

  • Replace bipolar with unipolar rectifiers
  • Essentially no switching losses
  • Higher efficiency
  • Reduction of heat-sink requirements
  • Parallel devices without thermal runaway

Features

  • 650-volt Schottky rectifier
  • Optimized for PFC boost diode applications
  • Zero reverse recovery current
  • Zero forward recovery voltage
  • High-frequency operation
  • Temperature-independent switching behavior
  • Extremely fast switching
  • Positive temperature coefficient on VF

All products with part number C3D10065E-TR are shipped as tape & reel in accordance with JEDEC specifications for MSL3 classification.

Supplier's Site Datasheet
Silicon Carbide Diode - C3D10065E - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide Diode
C3D10065E
Silicon Carbide Diode C3D10065E
Silicon Carbide Schottky Diode Features 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Switch Mode Power Supplies Power Factor Correction Motor Drives

Silicon Carbide Schottky Diode

Features

  • 650-Volt Schottky Rectifier
  • Zero Reverse Recovery Current
  • Zero Forward Recovery Voltage
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive Temperature Coefficient on VF

Benefits

  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway

Applications

  • Switch Mode Power Supplies
  • Power Factor Correction
  • Motor Drives
Supplier's Site Datasheet
Discrete Semiconductor Products - 134186-C3D10065E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
134186-C3D10065E
Discrete Semiconductor Products 134186-C3D10065E
Manufacturer: Cree Inc. Win Source Part Number: 134186-C3D10065E Category: Discrete Semiconductor Products Family: Diodes - Rectifiers - Single Packaging: Tube Mounting Style: SMD/SMT Speed: Fast Recovery = 200mA (Io) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Manufacturer Device Package: TO-252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 32A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Current - Reverse Leakage @ Vr: 50μA @ 650V Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz Operating Temperature - Junction: -55°C ~ 175°C Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited

Manufacturer: Cree Inc.
Win Source Part Number: 134186-C3D10065E
Category: Discrete Semiconductor Products
Family: Diodes - Rectifiers - Single
Packaging: Tube
Mounting Style: SMD/SMT
Speed: Fast Recovery = 200mA (Io)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Device Package: TO-252-2
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 32A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Reverse Leakage @ Vr: 50μA @ 650V
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Operating Temperature - Junction: -55°C ~ 175°C
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Diodes - C3D10065E-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Diodes
C3D10065E-ND
Single Diodes C3D10065E-ND
Diode Silicon Carbide Schottky 650V 32A (DC) Surface Mount TO-252-2

Diode Silicon Carbide Schottky 650V 32A (DC) Surface Mount TO-252-2

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Schottky Diodes & Rectifiers
C3D10065E
Schottky Diodes & Rectifiers C3D10065E
Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 650V, 10A

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 650V, 10A

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - C3D10065E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - Rectifiers
C3D10065E
Discrete Semiconductor Products - Diodes - Rectifiers C3D10065E
DIODE SIL CARB 650V 32A TO252-2

DIODE SIL CARB 650V 32A TO252-2

Supplier's Site

Technical Specifications

  Wolfspeed Richardson RFPD Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Schottky Diodes Diodes Schottky Diodes Diodes Schottky Diodes Rectifiers
Product Number C3D10065E C3D10065E 134186-C3D10065E C3D10065E-ND C3D10065E C3D10065E
Product Name 10-A, 650-V, Z-Rec® Schottky, TO-252-2 package Silicon Carbide Diode Discrete Semiconductor Products Single Diodes Schottky Diodes & Rectifiers Discrete Semiconductor Products - Diodes - Rectifiers
Package TO-252-2 TO-252-2
IF 15000 mA 10000 mA
VRRM 650 volts
Diode Type Silicon Carbide Diode
Unlock Full Specs
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