Wolfspeed Silicon Carbide Diode C6D06065G

Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Low Leakage Current (IR) Applications Industrial Power Supplies Switch Mode Power Supplies Server / Telecom Power Supplies Power Factor Correction Solar Inverter Uninterruptible Power Supply
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Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Low Leakage Current (IR) Applications Industrial Power Supplies Switch Mode Power Supplies Server / Telecom Power Supplies Power Factor Correction Solar Inverter Uninterruptible Power Supply
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Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Diode - C6D06065G - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide Diode
C6D06065G
Silicon Carbide Diode C6D06065G
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Low Leakage Current (IR) Applications Industrial Power Supplies Switch Mode Power Supplies Server / Telecom Power Supplies Power Factor Correction Solar Inverter Uninterruptible Power Supply

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.

Features

  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
  • Zero Reverse Recovery Current / Forward Recovery Voltage
  • Temperature-Independent Switching Behavior
  • Low Leakage Current (IR)

Applications

  • Industrial Power Supplies
  • Switch Mode Power Supplies
  • Server / Telecom Power Supplies
  • Power Factor Correction
  • Solar Inverter
  • Uninterruptible Power Supply
Supplier's Site Datasheet
Single Diodes - 1697-C6D06065G-ND - DigiKey
Thief River Falls, MN, United States
Single Diodes
1697-C6D06065G-ND
Single Diodes 1697-C6D06065G-ND
Diode Silicon Carbide Schottky 650V 23A (DC) Surface Mount TO-263-2

Diode Silicon Carbide Schottky 650V 23A (DC) Surface Mount TO-263-2

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - C6D06065G - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - Rectifiers
C6D06065G
Discrete Semiconductor Products - Diodes - Rectifiers C6D06065G
DIODE SIL CARB 650V 23A TO263-2

DIODE SIL CARB 650V 23A TO263-2

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Diodes Diodes Rectifiers
Product Number C6D06065G 1697-C6D06065G-ND C6D06065G
Product Name Silicon Carbide Diode Single Diodes Discrete Semiconductor Products - Diodes - Rectifiers
Diode Type Silicon Carbide Diode
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