Wolfspeed 8-A, 600-V, Z-Rec® Schottky, TO-220-2 package C3D08060A

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.

Features

• Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
• Zero Reverse Recovery Current / Forward Recovery Voltage
• Temperature-Independent Switching Behavior

Applications

• Industrial Switched Mode Power Supplies
• Uninterruptible and AUX Power Supplies
• Boost for PFC and DC-DC Stages
• Solar Inverters

DIODE SIL CARB 600V 24A TO220-2

Diode Silicon Carbide Schottky 600V 24A (DC) Through Hole TO-220-2

Manufacturer: Cree Inc.
Win Source Part Number: 088022-C3D08060A
Category: Discrete Semiconductor Products
Family: Diodes Rectifiers - Single
Series: Z-Rec
Packaging: Tube
Mounting Style: Through Hole
Speed: No Recovery Time > 500mA (Io)
Package: TO-220-2
Manufacturer Device Package: TO-220-2
Standard Package: 50
Catalog: Silicon Carbide Schottky Diode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Capacitance @ Vr F: 441pF @ 0V 1MHz
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance