Wolfspeed Silicon Carbide Diode C4D08120E-TR

Description
Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Solar Inverters Switch Mode Power Supplies (SMPS) Boost Diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters
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Description
Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Solar Inverters Switch Mode Power Supplies (SMPS) Boost Diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters
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Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Diode - C4D08120E-TR - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide Diode
C4D08120E-TR
Silicon Carbide Diode C4D08120E-TR
Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Solar Inverters Switch Mode Power Supplies (SMPS) Boost Diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters

Features

  • 1.2kV Schottky Rectifier
  • Zero Reverse Recovery Current
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive Temperature Coefficient on VF

Benefits

  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway

Applications

  • Solar Inverters
  • Switch Mode Power Supplies (SMPS)
  • Boost Diodes in PFC or DC/DC stages
  • Free Wheeling Diodes in Inverter stages
  • AC/DC converters
Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - Single - 1001300-C4D08120E-TR - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Diodes - Rectifiers - Single
1001300-C4D08120E-TR
Discrete Semiconductor Products - Diodes - Rectifiers - Single 1001300-C4D08120E-TR
Win Source Part Number: 1001300-C4D08120E-TR Category: Discrete Semiconductor Products>Diodes - Rectifiers - Single Series: Z-Rec® Speed: No Recovery Time > 500mA (Io) Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 24.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Capacitance @ Vr, F: 560pF @ 0V, 1MHz Operating Temperature - Junction: -55°C ~ 175°C Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 3 (168 Hours) HTSUS: 8541.10.0080 Mfr: Wolfspeed, Inc. Base Product Number: C4D08120

Win Source Part Number: 1001300-C4D08120E-TR
Category: Discrete Semiconductor Products>Diodes - Rectifiers - Single
Series: Z-Rec®
Speed: No Recovery Time > 500mA (Io)
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 24.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Operating Temperature - Junction: -55°C ~ 175°C
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 3 (168 Hours)
HTSUS: 8541.10.0080
Mfr: Wolfspeed, Inc.
Base Product Number: C4D08120

Buy Now Datasheet
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Thief River Falls, MN, United States
DIODE SILICON 1.2KV 24.5A TO252

DIODE SILICON 1.2KV 24.5A TO252

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Diode Silicon Carbide Schottky 1200V 24.5A (DC) Surface Mount TO-252-2

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Single Diodes - 1697-C4D08120E-TRDKR-ND - DigiKey
Thief River Falls, MN, United States
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Sheung Wan, Hong Kong
Schottky Diodes & Rectifiers
C4D08120E-TR
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Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 7.5A

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Discrete Semiconductor Products - Diodes - Rectifiers - C4D08120E-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
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DIODE SIL CARB 1.2KV 24.5A TO252

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Supplier's Site

Technical Specifications

  Richardson RFPD Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Diodes Schottky Diodes Diodes Schottky Diodes Rectifiers
Product Number C4D08120E-TR 1001300-C4D08120E-TR 1697-C4D08120E-TRCT-ND C4D08120E-TR C4D08120E-TR
Product Name Silicon Carbide Diode Discrete Semiconductor Products - Diodes - Rectifiers - Single Single Diodes Schottky Diodes & Rectifiers Discrete Semiconductor Products - Diodes - Rectifiers
Diode Type Silicon Carbide Diode
IF 8000 mA
Package TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-2
VF 1.8 volts 1.8 volts
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