With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
Features
Applications
Diode Silicon Carbide Schottky 650V 30A (DC) Surface Mount TO-263-2
DIODE SIL CARB 650V 30A TO263-2
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Diodes | Diodes | Rectifiers |
| Product Number | C6D08065G | 1697-C6D08065G-ND | C6D08065G |
| Product Name | Silicon Carbide Diode | Single Diodes | Discrete Semiconductor Products - Diodes - Rectifiers |
| Diode Type | Silicon Carbide Diode |