Richardson RFPD Datasheets for Diodes
Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
Diodes: Learn more
| Product Name | Notes |
|---|---|
| Dual Diode - Common Anode Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are offered... | |
| Dual Diode - Common Cathode Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are offered... | |
| Dual Diode - Common Cathode Configuration: MACOM's MA4ST1200 series is a highly repeatable, UHCVD/ion-implanted, hyper abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors... | |
| Dual Diode - Connected (Anti-Parallel) Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier... | |
| Dual Diode - Connected (Anti-Parallel) Configuration: MACOM's MA4E2037 single, MA4E2039 anti-parallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD... | |
| Dual Diode - Connected (Anti-Parallel) Configuration: The MA4E2508 SURMOUNT™ Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC)... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: The MA4E2513L-1289 SURMOUNT™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC... | |
| Dual Diode - Series Pair (Tee) Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1338 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1339 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1340 series is a silicon medium barrier schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed for use... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2514 SURMOUNT™ Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC)... | |
| KILOVOLT™ PIN diode series utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low as 1 MHz. | |
| M/A-COM Technology Solutions KILOVOLT™ PIN diode series utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low... | |
| M/A-COM Technology Solutions MADP-000907-14020 is a solderable, flip-chip Aluminum Gallium Arsenide (AlGaAs) PIN diode. It is fabricated with MOCVD grown epitaxy using a process and design that optimizes device to... | |
| M/A-COM Technology Solutions MELF PIN diode series are designed for usage in switch and attenuator applications requiring high power handling and low distortion. The MELF PIN diodes incorporate a fully... | |
| M/A-COM's MADS-001317-1500 single is a gallium arsenide flip chip Schottky barrier diode. This device is fabricated on OMCVD epitaxial material using a process designed for high device uniformity and extremely... | |
| MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are offered with standard Sn/Pb plating, as well... | |
| MACOM's MA4P7455-1225T is a wideband, lower insertion loss, high IP3, Quad PIN Diode ? Attenuator in a low-cost, surface mount SOT-25 package. Four PIN Diodes in one package reduce design... | |
| MACOM's MADP-007167-12250T RoHs equivalent product is a wideband, moderate insertion loss, high IP3, PIN Diode ? Quad Attenuator in a low-cost, surface mount SOT-25 package. Four PIN Diodes in one... | |
| PIN Diode Limiter. The MADL-011023 is a PIN diode limiter assembled in a lead-free 1.5 x 1.2 mm 6-lead TDFN plastic package. This PIN diode limiter provides exceptional low and... | |
| PIN-Schottky Anti-Parallel Diode Limiter. The MADL-011021 is a lead-free 1.5 x 1.2 mm TDFN surface mount plastic packaged that provides both low and high signal frequency operation from 10 MHz... | |
| Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. POW-R-BLOK™ | |
| Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. POW-R-BLOKTM... | |
| Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. | |
| Powerex Single Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. POW-R-BLOK™ | |
| Quad Diode Cross-Over Configuration: The MA4E2544L-1282 Series SurMount™ Low Barrier, Silicon Schottky Cross-Over Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of... | |
| Quad Diode Ring Configuration: The MA4E2532-1113 Series SURMOUNT™ Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Single Diode Configuration: A comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN series of... | |
| Single Diode Configuration: Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many microwave semiconductor applications These benefits result from the intrinsic semiconductor properties of GaAs. Its inherent... | |
| Single Diode Configuration: HIPAX PIN diode series is designed for usage in switch and attenuator applications requiring high power handling and low distortion. HIPAX PIN diodes incorporate a fully passivated... | |
| Single Diode Configuration: Kilovolt PIN diodes utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low as... | |
| Single Diode Configuration: MA4AGBLP912 is an Aluminum-Gallium- Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, produce less diode On resistance than conventional... | |
| Single Diode Configuration: MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity... | |
| Single Diode Configuration: MA4FCP Series consists of Silicon Flip Chip PIN diodes fabricated with MACOM's patented HMIC process. This diode is fabricated on epitaxial wafers using a process designed for... | |
| Single Diode Configuration: MA4FCP200 series is a silicon flip chip PIN diode fabricated with MACOM's patented HMICO process. This diode is fabricated on epitaxial wafers using a process designed for... | |
| Single Diode Configuration: MA4GP907 is a Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low... | |
| Single Diode Configuration: MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN... | |
| Single Diode Configuration: MACOM offers four families of low cost surface mount gallium arsenide tuning varactors. All families have silicon nitride protected junctions for low leakage current and high reliability. | |
| Single Diode Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are offered with standard Sn/Pb... | |
| Single Diode Configuration: MACOM produces a series of silicon PIN limiter diodes with small and medium I-region lengths which are specifically designed for high signal applications. The devices are designed... | |
| Single Diode Configuration: MACOM’s MA4FCP Series consists of Silicon Flip Chip PIN diodes fabricated with MACOM’s patented HMIC process. This diode is fabricated on epitaxial wafers using a process designed... | |
| Single Diode Configuration: MACOM's Broad line of packaged PIN diodes encompasses a comprehensive range of electrical characteristics and package outlines. This diverse union of semiconductor technology and chip packaging gives... | |
| Single Diode Configuration: MACOM's MA46H120 series is a gallium arsenide flip chip hyper abrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high... | |
| Single Diode Configuration: MACOM's MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device... | |
| Single Diode Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices... | |
| Single Diode Configuration: MACOM's MA4E2037 single, MA4E2039 anti-parallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using... | |
| Single Diode Configuration: MACOM's MA4ST1200 series is a highly repeatable, UHCVD/ion-implanted, hyper abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for... | |
| Single Diode Configuration: MACOM's series of low and medium power glass PIN diodes are specifically designed for use in switches, duplexers, electrically tuned digital filters AGC attenuators, TR switches and... | |
| Single Diode Configuration: Silicon PIN diode, surface mount plastic package for use as a switch where low loss and high isolation is required. These diodes are offered as an RoHS... | |
| Single Diode Configuration: The diodes have low noise figure through 26 GHz. Low Barrier diodes for minimum LO drive. Stripline and microstrip mixers from 100 MHz Upconverters. | |
| Single Diode Configuration: The MA44781 is a silicon PIN diodes in surface mount packages. There are two sets of two PIN diode pairs constructed in opposing configurations. The package is... | |
| Single Diode Configuration: The MA45300 series of silicon abrupt junction tuning varactors has been designed to obtain the highest Q possible. All diodes in this series have a high density... | |
| Single Diode Configuration: The MA46450, MA46470 and MA46410 series of tuning varactors are hyperabrupt junction Gallium Arsenide diodes featuring constant gamma 1.0 (MA46450 series), 1.25 (MA46470 series) or 1.5 (MA46410... | |
| Single Diode Configuration: The MA46580, MA46585 and MA46H130 series of beam lead constant gamma tuning varactors are hyperabrupt junction gallium arsenide diodes with a constant gamma of 1.0 or 1.25. | |
| Single Diode Configuration: The MA46600 series of microwave tuning varactors is a family of abrupt junction gallium arsenide devices featuring Q factors in excess of 8000. This series is specifically... | |
| Single Diode Configuration: The MA4E1339 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also usable in anti-parallel, shunt... | |
| Single Diode Configuration: The MA4E1340 series is a silicon medium barrier schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also suitable for usage in... | |
| Single Diode Configuration: The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed for use as high performance mixer... | |
| Single Diode Configuration: The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through... | |
| Single Diode Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage in a wide variety... | |
| Single Diode Configuration: The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which... | |
| Single Diode Configuration: The MA4E2502 SURMOUNT™ Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist... | |
| Single Diode Configuration: The MA4P7441F-1091T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4P7446F-1091T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4P7452F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4P7461F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4P7464F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4P7470F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to... | |
| Single Diode Configuration: The MA4ST1300 series is a highly repeatable, UHCVD/ion-implanted, hyperabrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for high... | |
| Single Diode Configuration: The MA4ST200 series is a ion-implanted, hyperabrupt junction, silicon tuning varactors in surface mount packages. This series of varactors is designed for high Q and low voltage... | |
| Single Diode Configuration: The MA4ST400 series are ion-implanted, hyperabrupt junction, silicon tuning varactors in the SOT-23 surface mount package. These thermal oxide passivated diodes feature high capacitance ratio and quality... | |
| Single Diode Configuration: The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550... | |
| Single Diode Configuration: This device is a Silicon-Glass Beam-Lead PIN diode fabricated with MACOM's patented HMIC™ process. This device features one silicon pedestal embedded in a low loss, low dispersion... | |
| Single Diode Configuration: This device is a silicon-glass PIN diode chip fabricated with MACOM's patented HMIC process. This device features two silicon pedestals embedded in a low loss glass. The... | |
| Single Diode Configuration: This device is a silicon-glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss glass. The... | |
| Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion... | |
| Single Diode Configuration: This family of low capacitance Schottky diodes is designed to give superior performance in video detectors and power monitors from 100 MHz through 40 GHz. They have... | |
| Single Diode Configuration: This family of Zero Bias Detector (ZBD) diodes is designed for use in video detectors and power monitors eliminating the need to provide external DC Bias to... | |
| Single Diode Configuration: This series of M/ACOM semiconductor products is hermetically sealed strip-line package PIN diode designed to drop into a 50 ohm strip-line circuit without external matching. The MA47200... | |
| Single Diode Configuration: This Zero Bias Detector (ZBD) diode is suitable for use in microstrip or stripline detector circuits. The 4 mil diameter gold pad and sturdy construction allow you... | |
| The axial leaded glass PIN diode series of low and medium power are specifically designed for use in switches, duplexers, electrically tuned digital filters AGC attenuators, TR switches and RF... | |
| The MA44700 series of Step Recovery diodes is designed for use in low power multipliers with output frequencies of up to 5 GHz. These Step Recovery diodes generate harmonics by... | |
| The MA4E1338 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also suitable for usage in anti-parallel, shunt power... | |
| The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed for use as high performance mixer and detector diodes. | |
| The MA4E2200 series are silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage in a wide variety of detector applications. | |
| The MADP-000235-10720T is a surface mount PIN diode in a non-magnetic Metal Electrode Leadless Faced (MELF) package. The MADP-000235-10720T is manufactured using M/A-COM Technology Solutions time proven HIPAX technology. The... | |
| The MADP-009989 diode was designed to protect MRI receivers from high RF energy fields including long RF pulses and RF spike pulses present in most MRI machines. This diode acts... | |
| The MADP-011027 is a lead-free 1.5 x 1.2 mm DFN surface mount plastic packaged that provides both low and high signal frequency operation from 50 MHz to 12 GHz. The... | |
| The MADP-011028 is a lead-free 1.5 x 1.2 mm DFN surface mount plastic packaged that provides both low and high signal frequency operation from 50 MHz to 12 GHz. The... | |
| The MADP-011029 is a lead-free 1.5 x 1.2 mm DFNsurface mount plastic packaged that provides bothlow and high signal frequency operation from50 MHz to 12 GHz. The higher breakdown voltageand... | |
| The MADP-011048 acts as a passive switch using silicon PIN diodes in a non-magnetic surface mount package. There are two sets of diode pairs constructed in an anti-parallel configuration that... | |
| The MADP-011104 is a high-power PIN diode assembled in a lead-free 3 mm 12-lead QFN plastic package. This shunt device provides exceptional switch or attenuator performance from 50 MHz to... | |
| This device is a silicon, glass PIN diode surmount chip fabricated with MACOM’s patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. | |
| This device is a silicon, glass PIN diode surmount chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. | |
| This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode... |
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