Richardson RFPD Datasheets for Diodes
Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
Diodes: Learn more
| Product Name | Notes |
|---|---|
| 200 °C High Temperature High Voltage Rectifier Diodes|•Exceptional high temperature Stability up to 200 °C|•Exceptionally low leakage|•Small size|•3 KV PRV | |
| 300 ns at 200 °C High Temperature-Fast Recovery High Voltage Rectifier Diodes|•Exceptional high temperature Stability up to 200 °C|•Exceptionally low leakage|•Small size|•3 KV PRV | |
| Features 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency Operation Temperature-Independ ent Switching Behavior AEC-Q101 Qualified and PPAP Capable Humidity Resistant Benefits Replace Bipolar with Unipolar... | |
| Features 650V Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Higher System... | |
| DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips | |
| DSG9500-000: Planar Beam Lead PIN Diode | |
| Dual Diode - Connected (Anti-Parallel) Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1338 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1339 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1340 series is a silicon medium barrier schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Features 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency Operation Temperature-Independ ent Switching Behavior AEC-Q101 Qualified and PPAP Capable Humidity Resistant Benefits Replace Bipolar with Unipolar... | |
| Features 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Replace Bipolar... | |
| Features 650V Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Higher System... | |
| High Voltage High Current Miniature Rectifiers|•Small size molded packages|•PRV 1,000 to 12,000 volts|•Fast recovery (R series)|•Avalanche characteristics | |
| High Voltage Rectifier Assemblies|•Quick disconnect tab terminals|•Universal mounting|•PRV 5,000 to 15,000 volts|•Average current to 1 Amperes | |
| High Voltage Rectifier Assemblies|•Quick disconnect turret type terminals|•Universal mounting|•PRV 5,000 to 15,000 volts|•Average current to 1 Amperes | |
| High Voltage Rectifier Ultra-Miniature and Miniature|•Small size epoxy packages|•Fast and standard recovery times|•PRV to 10,000 volts|•Very low reverse leakage | |
| Kilovolt High Current Rectifier Assemblies|•Matched silicon rectifier elements|•Rated current to 3.0 Amperes|•PRV 5,000 to 50,000 volts|•Fast recovery (RHP series)|•All applicable MIL-STD-750 tests|•High thermal conductivity encapsulation | |
| Mesa Beam Lead PIN Diode | |
| Minibridge® 40/50 Amperes Bridge Rectifiers Wire Leads for PC Boards|•Integrally molded heat sinks provide very low thermal resistance|•UL Recognized | |
| Minibridge® 40/50 Amperes Single-Phase, Full-Wave Bridge|•Integrally molded heat sinks provide low thermal resistance|•Space Saving In-Line Design|•UL Recognized | |
| Minibridge® Fast Recovery, 32, 40 and 50 Amperes|•Integrally molded heat sinks provide very low thermal resistance|•UL Recognized | |
| Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. POW-R-BLOK™ | |
| Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. POW-R-BLOKTM... | |
| Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. | |
| Powerex Fast Recovery Single Diode Modules are designed for use in applications requiring fast switching. The modules are isolated for easy mounting with other components on common heatsinks. | |
| Powerex Single and Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common... | |
| Powerex Single Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. POW-R-BLOK™ | |
| Powerex Single Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. | |
| Rectifier Diode | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Silicon Beamless Schottky Diodes—Pairs and Quads | |
| Silicon Beamless Schottky Diodes-Pairs and Quads | |
| Silicon Carbide Schottky Diode Chip Features 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF | |
| Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads | |
| Single Diode Configuration: MA4AGBLP912 is an Aluminum-Gallium- Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, produce less diode On resistance than conventional... | |
| Single Diode Configuration: MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity... | |
| Single Diode Configuration: MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN... | |
| Single Diode Configuration: MACOM offers four families of low cost surface mount gallium arsenide tuning varactors. All families have silicon nitride protected junctions for low leakage current and high reliability. | |
| Single Diode Configuration: MACOM's MA46H120 series is a gallium arsenide flip chip hyper abrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high... | |
| Single Diode Configuration: MACOM's MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device... | |
| Single Diode Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices... | |
| Single Diode Configuration: MACOM's series of low and medium power glass PIN diodes are specifically designed for use in switches, duplexers, electrically tuned digital filters AGC attenuators, TR switches and... | |
| Single Diode Configuration: The diodes have low noise figure through 26 GHz. Low Barrier diodes for minimum LO drive. Stripline and microstrip mixers from 100 MHz Upconverters. | |
| Single Diode Configuration: The MA44781 is a silicon PIN diodes in surface mount packages. There are two sets of two PIN diode pairs constructed in opposing configurations. The package is... | |
| Single Diode Configuration: The MA45300 series of silicon abrupt junction tuning varactors has been designed to obtain the highest Q possible. All diodes in this series have a high density... | |
| Single Diode Configuration: The MA46450, MA46470 and MA46410 series of tuning varactors are hyperabrupt junction Gallium Arsenide diodes featuring constant gamma 1.0 (MA46450 series), 1.25 (MA46470 series) or 1.5 (MA46410... | |
| Single Diode Configuration: The MA46580, MA46585 and MA46H130 series of beam lead constant gamma tuning varactors are hyperabrupt junction gallium arsenide diodes with a constant gamma of 1.0 or 1.25. | |
| Single Diode Configuration: The MA46600 series of microwave tuning varactors is a family of abrupt junction gallium arsenide devices featuring Q factors in excess of 8000. This series is specifically... | |
| Single Diode Configuration: The MA4E1339 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also usable in anti-parallel, shunt... | |
| Single Diode Configuration: The MA4E1340 series is a silicon medium barrier schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also suitable for usage in... | |
| Single Diode Configuration: This family of low capacitance Schottky diodes is designed to give superior performance in video detectors and power monitors from 100 MHz through 40 GHz. They have... | |
| Single Diode Configuration: This series of M/ACOM semiconductor products is hermetically sealed strip-line package PIN diode designed to drop into a 50 ohm strip-line circuit without external matching. The MA47200... | |
| Single Diode Isolated Module. Powerex Single Diode Module is designed for use in applications requiring rectification and isolated packaging. The module is isolated for easy mounting with other components on... | |
| Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low... | |
| The first is attenuators where current consumption is the most important design consideration. The second application for this series of diodes is in switches where low capacitance is the driving... | |
| The GC4700 series diodes are specially processed PIN diodes designed for use in passive or active limiters at frequencies through Ku band. Thirteen categories of devices are offered for flexibility... | |
| The high power PIN diode series is available in surface mount stud and insulated stud packages. These PIN diode chips utilize high resistivity material and an intrinsic float zone process... | |
| The HSMP-489x series products feature ultra low parasitic inductance. These products are specifically designed for use at frequencies which are much higher than the upper limit for conventional PIN diodes. | |
| This “fast recovery” rectifier diode 1N5415 through 1N5420 series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers... | |
| This series of Skyworks GaAs Schottky barrier flip-chip diodes produces excellent high frequency performance up to millimeter wave ranges in a mechanically robust, small form factor. These diodes are comprised... | |
| This SMT limiting diode driver element consists of a specially processed Schottky diode packaged in a convenient, low-cost plastic outline suitable for standard or co-planar microstrip circuits. Featuring lowloss, low... | |
| With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. | |
| With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies... | |
| Zero Bias Silicon Schottky Barrier Detector Diodes |
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