Skyworks Solutions, Inc. Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads CDE7618-000

Description
Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-ty pe silicon is also available.
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Description
Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-ty pe silicon is also available.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads - CDE7618-000 - Skyworks Solutions, Inc.
Irvine, CA, United States
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads
CDE7618-000
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads CDE7618-000
Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-ty pe silicon is also available.

Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-type silicon is also available.

Supplier's Site
RF Schottky Diode - CDE7618-000 - Richardson RFPD
Downers Grove, IL, United States
RF Schottky Diode
CDE7618-000
RF Schottky Diode CDE7618-000
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads

Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads

Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - RF Diodes - CDE7618-000 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - RF Diodes
CDE7618-000
Discrete Semiconductor Products - Diodes - RF Diodes CDE7618-000
SILICON CHIP CAPACITOR

SILICON CHIP CAPACITOR

Supplier's Site
Sheung Wan, Hong Kong
Schottky Diodes & Rectifiers
CDE7618-000
Schottky Diodes & Rectifiers CDE7618-000
Schottky Diodes & Rectifiers K-Band Cj=.1pF

Schottky Diodes & Rectifiers K-Band Cj=.1pF

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Technical Specifications

  Skyworks Solutions, Inc. Richardson RFPD Acme Chip Technology Co., Limited VAST STOCK CO., LIMITED
Product Category Schottky Diodes RF Diodes RF Diodes Schottky Diodes
Product Number CDE7618-000 CDE7618-000 CDE7618-000 CDE7618-000
Product Name Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads RF Schottky Diode Discrete Semiconductor Products - Diodes - RF Diodes Schottky Diodes & Rectifiers
Configuration Single
Diode Type Schottky
Operating Frequency 40000 MHz
CT 0.1000 pF
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