Wolfspeed Silicon Carbide Diode C6D20065G

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Low Leakage Current (IR) Applications Industrial Power Supplies Uninterruptible and AUX Power Supplies Switch Mode Power Supplies Solar Inverters Power Factor Correction Server/Telecom Power Supplies

DIODE SIL CARB 650V 64A TO2632