Wolfspeed Single Diodes C6D20065D1

DIODE SIL CARB 650V 64A TO2473

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Features Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independ ent Switching Behavior Low Leakage Current (IR) Applications Industrial Power Supplies Battery Charging Systems Switch Mode Power Supplies Solar Inverters Server/Telecom Power Supplies