Nexperia B.V. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 118 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| 118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| 120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6... | |
| 120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6... | |
| 160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6... | |
| 160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6... | |
| 180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6... | |
| 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6... | |
| 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6... | |
| 200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6... | |
| 200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s... | |
| 240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 250 A logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs... | |
| 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... | |
| 300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs... | |
| 325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually... | |
| 50 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications operating... | |
| 50 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| 500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually... | |
| 60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| 60 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| 85 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| 85 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| 95 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| 95 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at... | |
| Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using NextPowerS3 technology. Features and benefits Dual MOSFET Repetitive avalanche rated High reliability LFPAK56D package Copper-clip, solder die attach... | |
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N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN6R1-40HLX
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Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits Dual MOSFET Repetitive avalanche rated High reliability LFPAK56D package Copper-clip, solder die attach... |
| Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits High peak drain current IDM Copper clip and flexible Leads High operating... | |
| Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package, using application specific (ASFET) repetitive avalanche silicon technology. Features and benefits High reliability LFPAK56D package, copper-clip, solder die attach... | |
| Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits Dual MOSFET Repetitive avalanche rated High reliability LFPAK56D package Copper-clip, solder die attach... | |
| Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits High peak drain current IDM Copper clip and flexible Leads High operating... | |
| Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain... | |
| Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain... | |
| In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate... | |
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N-channel 25 V 0.99 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN0R9-25YLC,115
N-channel 25 V 1.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R1-25YLC,115
N-channel 25 V, 2.4 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN2R2-25YLC,115
N-channel 25 V, 6.1 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R0-25YLB,115
N-channel 25 V, 6.5 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R5-25YLC,115
N-channel 30 V 1.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R0-30YLC,115
N-channel 30 V 13.6 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN013-30YLC,115
N-channel 30 V, 2.8 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN2R6-30YLC,115
N-channel 30 V, 4.35mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN4R1-30YLC,115
N-channel 30 V, 4.8 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN4R5-30YLC,115
N-channel 30 V, 6.5 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R0-30YLB,115
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Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits... |
| Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits... | |
| Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment Features and benefits... | |
| Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and... | |
| Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and... | |
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N-channel 25 V, 5.69 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN5R4-25YLDX
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Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an... |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an... | |
| Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSS leakage even when hot, high efficiency and high current. Rated... | |
| Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. Features and... | |
| Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor... | |
| Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. Features... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold... | |
| N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R0-100ASE delivers very low R... | |
| N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80ASE delivers very low R... | |
| N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100ASE delivers very low R... | |
| N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R0-80CSE delivers very low R... | |
| N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R1-100CSE delivers very low R... | |
| N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80CSE delivers very low R... | |
| N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100CSE delivers very low R... | |
| N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R2-80YSE delivers very low RDSon and a very strong... | |
| N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R8-100YSE delivers very low RDSon and a very strong... | |
| N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R8-80SSE delivers very low R... | |
| N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R9-80SSE delivers very low R... | |
| N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R2-100SSE delivers very low R... | |
| N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low R... | |
| New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90 W to each powered device (PD). Such solutions place increased demands on the power... | |
| New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing... | |
| New standards and proprietary approaches are enabling the next generation of Power-over-Ethernet (PoE) systems capable of delivering up to 100 W to each powered device (PD). Large screen LCD displays,... | |
| NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. Features and benefits Low Qrr for higher efficiency... | |
| NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower... | |
| NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. Features and benefits Low Qrr for higher efficiency... | |
| NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD10. Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD12. Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD13. Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PRMB11-Q NPN/PNP complement: PRMD3-Q Features and benefits 100 mA output current... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PRMB11 NPN/PNP complement: PRMD3 Features and benefits 100 mA output current... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD13 Features and benefits 100 mA output current capability Built-in bias resistors... | |
| NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design... | |
| NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD10 Features and benefits 100 mA output current capability Built-in bias resistors... | |
| NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD12. Features and benefits 100 mA output current capability Built-in bias resistors... | |
| NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PQMB11. NPN/PNP complement: PQMD3. Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transist ors (RET) in small Surface-Mounted Device (SMD) plastic packages. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Low package height... | |
| NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit... | |
| NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH10 Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH11 PNP/PNP complement: PQMB11 Features and benefits 100 mA output current... | |
| NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH13 Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH11-Q PNP/PNP complement: PRMB11-Q Features and benefits 100 mA output... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH11 PNP/PNP complement: PRMB11 Features and benefits 100 mA output... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH10. Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH12. Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH13. Features and benefits 100 mA output current capability Built-in bias... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low leakage current Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold... | |
| PNP/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH11-Q NPN/PNP complement: PRMD3-Q Features and benefits 100 mA output current... | |
| PNP/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH11 NPN/PNP complement: PRMD3 Features and benefits 100 mA output current... | |
| PNP/PNP Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH11 NPN/PNP complement: PQMD3 Features and benefits 100 mA output current capability... | |
| SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial... | |
| SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation... | |
| SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation... | |
| Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits... | |
| Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of motor, industrial, communications and domestic equipment. Features and... | |
| Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very low RDSon and... | |
| Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand... | |
| Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot-swap" controllers - robust enough to withstand... | |
| Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. | |
| Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot-swap" controllers - robust enough to withstand... | |
| Standard level N-channel MOSFET in a SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. | |
| Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. | |
| Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and... | |
| Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of telecom, industrial and domestic equipment. Features... | |
| Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| SuperSOA N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. PSMN8R9-100BSE delivers low RDSon and very strong linear-mode (SOA) performance, and complements the latest "hot-swap" controllers... |
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