Nexperia B.V. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using NextPowerS3 technology. Features and benefits Dual MOSFET Repetitive avalanche rated High reliability LFPAK56D package Copper-clip, solder die attach... | |
| Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits Dual MOSFET Repetitive avalanche rated High reliability LFPAK56D package Copper-clip, solder die attach... | |
| Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits High peak drain current IDM Copper clip and flexible Leads High operating... | |
| Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package, using application specific (ASFET) repetitive avalanche silicon technology. Features and benefits High reliability LFPAK56D package, copper-clip, solder die attach... | |
| Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits Dual MOSFET Repetitive avalanche rated High reliability LFPAK56D package Copper-clip, solder die attach... | |
| Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits High peak drain current IDM Copper clip and flexible Leads High operating... | |
| Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity Module shrinkage through reduced component count Improved system level Rth(j-amb) due to optimized package design Lower... | |
| Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits... | |
| Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits... | |
| Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Ultra low Q... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench Superjunction Technology... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Ultra low Q... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1 kV ESD protection Small... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 2.2 kV ESD protection Small... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Logic-level compatible Leadless ultra small package 0.63mm... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package; | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Low... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low leakage current Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Fast switching Trench MOSFET technology... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology Features and benefits Low leakage current Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Leadless ultra small... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks for... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection:... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Low on-state resistance Trench... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range T... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj =... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET... | |
| N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Features and benefits Low on-state resistance in a small surface mount package Applications DC-to-DC primary side switching | |
| NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower... | |
| NPN general-purpose transistor encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMSTA56-Q Features and benefits High current (max. 500 mA) Very small SMD plastic... | |
| NPN general-purpose transistor encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMSTA56 Features and benefits High current (max. 500 mA) Very small SMD plastic... | |
| NPN general-purpose transistor encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complements: PMSTA55 Features and benefits High current (max. 500 mA) Very small SMD plastic... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Applications Switching and... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Qualified according to... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMST5401 Features and benefits Low current (max. 300 mA) High voltage (max. 160 V)... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complements: PMSTA92-Q Features and benefits High current (max. 500 mA) High voltage (max. 200 V)... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complements: PMSTA92 Features and benefits High current (max. 500 mA) High voltage (max. 200 V)... | |
| NPN switching transistor in a SOT323 plastic package. Features and benefits Low current (max. 200 mA) Low voltage (max. 15 V). AEC-Q101 qualified Applications High-speed switching applications, primarily in portable... | |
| NPN switching transistor in a SOT323 plastic package. PNP complement: PMST2907A. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications High-speed switching and... | |
| NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO =40... | |
| NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) Qualified according to... | |
| NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMST3906 Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage... | |
| NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMST4403 Features and benefits High current (max. 600 mA) Low voltage (max. 40 V)... | |
| NPN switching transistor in an SC-70 (SOT323) plastic package. PNP complement: PMSS3906. Features and benefits Low current (max. 100 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications General purpose... | |
| NPN transistor in a SC-70; SOT323 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V). AEC-Q101 qualified Applications Low-noise input stages in audio equipment. | |
| NPN transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complements: PMSTA55-Q Features and benefits High current (max. 500 mA) Very small SMD plastic package Collector-emitter... | |
| NPN transistor in an SC-70; SOT323 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 50 V). AEC-Q101 qualified Applications General purpose switching and amplification in... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD10. Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD12. Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD13. Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PRMB11-Q NPN/PNP complement: PRMD3-Q Features and benefits 100 mA output current... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PRMB11 NPN/PNP complement: PRMD3 Features and benefits 100 mA output current... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design... | |
| NPN/NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD13 Features and benefits 100 mA output current capability Built-in bias resistors... | |
| NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design... | |
| NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD10 Features and benefits 100 mA output current capability Built-in bias resistors... | |
| NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD12. Features and benefits 100 mA output current capability Built-in bias resistors... | |
| NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PQMB11. NPN/PNP complement: PQMD3. Features and benefits 100 mA output current capability... | |
| NPN/PNP double Resistor-Equipped Transist ors (RET) in small Surface-Mounted Device (SMD) plastic packages. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Low package height... | |
| NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit... | |
| NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH10 Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH11 PNP/PNP complement: PQMB11 Features and benefits 100 mA output current... | |
| NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH13 Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH11-Q PNP/PNP complement: PRMB11-Q Features and benefits 100 mA output... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH11 PNP/PNP complement: PRMB11 Features and benefits 100 mA output... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH10. Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH12. Features and benefits 100 mA output current capability Built-in bias... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH13. Features and benefits 100 mA output current capability Built-in bias... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.5 kV ESD protection (human... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 2.4 kV ESD protected Small... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Side wettable... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package; | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low leakage current Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low leakage current Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V drain-source on-state resistance rated Very... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 3 kV ESD protected Trench MOSFET technology... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Very fast... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range T... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Very... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very fast switching Enhanced... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V RDSon rated Very fast... | |
| PNP high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA42-Q Features and benefits Very small package High voltage Qualified according to AEC-Q101 and... | |
| PNP high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA42 Features and benefits Very small package High voltage Applications Primarily intended for use... | |
| PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904-Q Features and benefits Collector current: IC ≤ -200 mA Collector-emitter voltage: V... | |
| PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904 Features and benefits Collector current: IC ≤ -200 mA Collector-emitter voltage: V... | |
| PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits General purpose switching transistor Qualified according to AEC-Q101 and recommended for use in... | |
| PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMST2222A Features and benefits General purpose switching transistor Applications Switching and linear amplification | |
| PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMST4401-Q Features and benefits General purpose switching transistor Qualified according to AEC-Q101 and recommended... | |
| PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMST4401 Features and benefits General purpose switching transistor Applications Switching and linear amplification | |
| PNP switching transistor in an SOT323 (SC-70) plastic package. NPN complement: PMSS3904. Features and benefits Low current (max. 100 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Switching, e.g. | |
| PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA05-Q Features and benefits High current (max. 500 mA) Collector-emitter voltage: 60 V Qualified according... | |
| PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA05 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 60 V AEC-Q101 qualified... | |
| PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA06-Q Features and benefits High current (max. 500 mA) Collector-emitter voltage: 80 V Qualified according... | |
| PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA06 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 80 V AEC-Q101 qualified... | |
| PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Current gain matching Base-emitter voltage matching Application-optimize d pinout Qualified according to... | |
| PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP hFE1/hFE2 0.98 complement: PMP5201Y-Q NPN/NPN complement: PMP4501Y-Q Features and benefits Current gain matching Base-emitter... | |
| PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP hFE1/hFE2 0.98 complement: PMP5201Y NPN/NPN complement: PMP4501Y Features and benefits Current gain matching Base-emitter... | |
| PNP/PNP matched double transistor in an ultra small Surface-Mounted Device (SMD) plastic package. The transistors in the SOT666 package are fully isolated internally. PNP/PNP hFE1/hFE2 0.98 complement: PMP5201V NPN/NPN complement:... | |
| PNP/PNP matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMP4501QAS Features and benefits Reduces component count Reduces pick and place costs... | |
| PNP/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH11-Q NPN/PNP complement: PRMD3-Q Features and benefits 100 mA output current... | |
| PNP/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PRMH11 NPN/PNP complement: PRMD3 Features and benefits 100 mA output current... | |
| PNP/PNP Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH11 NPN/PNP complement: PQMD3 Features and benefits 100 mA output current capability... | |
| Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits... | |
| Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of motor, industrial, communications and domestic equipment. Features and... | |
| Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications... | |
| Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot-swap" controllers - robust enough to withstand... | |
| Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... | |
| Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and... | |
| Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features... |
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