N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 20V 600mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3
N-Channel 20V 600mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3
N-Channel 20V 600mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3
PMZB600UNEL - 20 V, N-channel Trench MOSFET DFN 3-Pin Product overview: PMZB600UNELYL from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMZB600UNELYL can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325331-PMZB600UNELY
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 10,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW
Supplier Device Package: DFN1006B-3
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 3-XFDFN
ECCN: EAR99
Fake Threat In the Open Market: 68
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: 1727-7378-2,1727-737
Base Product Number: PMZB600
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
RoHS Status: ROHS3 Compliant
MOSFET 20 V, N-channel Trench MOSFET
MOSFET N-CH 20V 600MA DFN1006B-3
SOT-883-3 MOSFETs ROHS
MOSFET N-CH 20V 600MA DFN1006B-3
MOSFET, N-CH, 20V, 0.6A, SOT-883B; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.47ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMZB600UNELYL | 1727-PMZB600UNELYLDKR-ND | 278-PMZB600UNELYL | 1325331-PMZB600UNELYL | PMZB600UNELYL | PMZB600UNELYL | PMZB600UNELYL | PMZB600UNELYL | 37AC0875 |
| Product Name | 20 V, N-channel Trench MOSFET | Single FETs, MOSFETs | N-Channel 20 V DFN MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 0.6A, Sot-883B; Transistor Polarity Nexperia |
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| IDSS | 600 milliamps | 600 milliamps | 600 milliamps | ||||||
| VGS(off) | 8 volts | ||||||||
| PD | 360 milliwatts | 360 milliwatts | 360 milliwatts |
