Nexperia B.V. TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN013-100ES,127 PSMN013-100ES,127

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 792613-PSMN013-100ES ,127 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Family Name: PSMN013-100ES Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3195pF @ 50V Vgs (Maximum): ±20V Power Dissipation (Maximum): 170W (Tc) Rds On (Maximum) @ Id, Vgs: 13.9 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): SPI80N10L; PSMN013-100ES; STFI130N10F3; IRFSL4510PBF; 2SK3479-S-AZ; 2SK3479-S; 2SK3479-S-A; Introduction Date: September 17, 2009 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 792613-PSMN013-100ES ,127 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Family Name: PSMN013-100ES Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3195pF @ 50V Vgs (Maximum): ±20V Power Dissipation (Maximum): 170W (Tc) Rds On (Maximum) @ Id, Vgs: 13.9 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): SPI80N10L; PSMN013-100ES; STFI130N10F3; IRFSL4510PBF; 2SK3479-S-AZ; 2SK3479-S; 2SK3479-S-A; Introduction Date: September 17, 2009 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN013-100ES,127 - 792613-PSMN013-100ES,127 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN013-100ES,127
792613-PSMN013-100ES,127
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN013-100ES,127 792613-PSMN013-100ES,127
Manufacturer: Nexperia USA Inc. Win Source Part Number: 792613-PSMN013-100ES ,127 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Family Name: PSMN013-100ES Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3195pF @ 50V Vgs (Maximum): ±20V Power Dissipation (Maximum): 170W (Tc) Rds On (Maximum) @ Id, Vgs: 13.9 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): SPI80N10L; PSMN013-100ES; STFI130N10F3; IRFSL4510PBF; 2SK3479-S-AZ; 2SK3479-S; 2SK3479-S-A; Introduction Date: September 17, 2009 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 792613-PSMN013-100ES,127
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Family Name: PSMN013-100ES
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 59nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3195pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 170W (Tc)
Rds On (Maximum) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): SPI80N10L; PSMN013-100ES; STFI130N10F3; IRFSL4510PBF; 2SK3479-S-AZ; 2SK3479-S; 2SK3479-S-A;
Introduction Date: September 17, 2009
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
100V 68A MOSFET Transistor
285-PSMN013-100ES,127
100V 68A MOSFET Transistor 285-PSMN013-100ES,127
Trans MOSFET N-CH 100V 68A 3-Pin(3+Tab) I2PAK Rail Product overview: PSMN013-100ES,127 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 68A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 68A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PSMN013-100ES,12 7 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 100V 68A 3-Pin(3+Tab) I2PAK Rail Product overview: PSMN013-100ES,127 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 68A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 68A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PSMN013-100ES,127 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 792613-PSMN013-100ES,127 285-PSMN013-100ES,127
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN013-100ES,127 100V 68A MOSFET Transistor
PD 170000 milliwatts 170000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F)
Package Type SOT3
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