P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It has a drain-source voltage rating of -20 V, a continuous drain current of -5 A at 25 °C, and a drain-source on-state resistance of 28 to 32.5 mΩ at -4.5 V gate-source voltage and 25 °C. The device supports electrostatic discharge protection above 2 kV HBM and is AEC-Q101 qualified for automotive applications.
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 20V 5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
P-Channel 20V 5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
P-Channel 20V 5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
MOSFET P-CH 20V 5A DFN2020MD-6 Product overview: PMPB29XPEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB29XPEAX can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 890092-PMPB29XPEAX
Series: Automotive, AEC-Q101, TrenchMOS™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 20 V 5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
Package: 6-UDFN Exposed Pad
Package: Reel - TR
Mounting: Surface Mount
Family Name: PMPB29
Categories: Discrete Semiconductor Products
Case / Package: DFN2020MD-6
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 26 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 934070928115, 1727-7842-6, 1727-7842-1, 1727-7842-2
MOSFET P-CH 20V 5A DFN2020MD-6
MOSFET, P-CH, -20V, -5A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power RoHS Compliant: Yes
MOSFET P-CH 20V 5A DFN2020MD-6
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB29XPEAX | 1727-7842-1-ND | 278-PMPB29XPEAX | 890092-PMPB29XPEAX | PMPB29XPEAX | 78AC6356 | PMPB29XPEAX | PMPB29XPEAX |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs | 20V 5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMPB29XPEAX | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -20V, -5A, Sot-1220; Transistor Polarity Nexperia | Single FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | -20 volts | 20 volts | 20 volts | |||||
| IDSS | -5000 milliamps | -5000 milliamps | 5000 milliamps | |||||
| VGS(off) | 12 volts | |||||||
| PD | 1.7 milliwatts | 12.5 milliwatts | 1700 milliwatts |
