Nexperia B.V. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology... | |
| Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching... | |
| Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. Features and benefits Dual device Fast switching Footprint 40 % smaller... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching... | |
| Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Ultra low Q... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench Superjunction Technology... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Ultra low Q... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1 kV ESD protection Small... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 2.2 kV ESD protection Small... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Logic-level compatible Leadless ultra small package 0.63mm... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package; | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Low... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low leakage current Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Fast switching Trench MOSFET technology... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Leadless ultra small... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks for... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range T... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj =... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Logic-level compatible Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Extended temperature range T... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj =... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small TO-236AB (SOT23-1) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage... | |
| N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Features and benefits Low on-state resistance in a small surface mount package Applications DC-to-DC primary side switching | |
| NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. Features and benefits High current (max. 1 A) Low collector-emitter saturation voltage ensures reduced power... | |
| NPN general-purpose transistor encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMSTA56-Q Features and benefits High current (max. 500 mA) Very small SMD plastic... | |
| NPN general-purpose transistor encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMSTA56 Features and benefits High current (max. 500 mA) Very small SMD plastic... | |
| NPN general-purpose transistor encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complements: PMSTA55 Features and benefits High current (max. 500 mA) Very small SMD plastic... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Applications Switching and... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Qualified according to... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMST5401 Features and benefits Low current (max. 300 mA) High voltage (max. 160 V)... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complements: PMSTA92-Q Features and benefits High current (max. 500 mA) High voltage (max. 200 V)... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complements: PMSTA92 Features and benefits High current (max. 500 mA) High voltage (max. 200 V)... | |
| NPN switching transistor in a SOT323 plastic package. Features and benefits Low current (max. 200 mA) Low voltage (max. 15 V). AEC-Q101 qualified Applications High-speed switching applications, primarily in portable... | |
| NPN switching transistor in a SOT323 plastic package. PNP complement: PMST2907A. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications High-speed switching and... | |
| NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO =40... | |
| NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) Qualified according to... | |
| NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMST3906 Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage... | |
| NPN switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMST4403 Features and benefits High current (max. 600 mA) Low voltage (max. 40 V)... | |
| NPN switching transistor in an SC-70 (SOT323) plastic package. PNP complement: PMSS3906. Features and benefits Low current (max. 100 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications General purpose... | |
| NPN transistor in a SC-70; SOT323 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V). AEC-Q101 qualified Applications Low-noise input stages in audio equipment. | |
| NPN transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complements: PMSTA55-Q Features and benefits High current (max. 500 mA) Very small SMD plastic package Collector-emitter... | |
| NPN transistor in an SC-70; SOT323 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 50 V). AEC-Q101 qualified Applications General purpose switching and amplification in... | |
| NPN/NPN matched double transistor in a very small SOT353 (SC-88A) Surface-Mounted Device (SMD) plastic package. The transistors in the SOT353 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.95 complement: PMP4501G... | |
| NPN/NPN matched double transistor in a very small Surface-Mounted Device (SMD) SOT363 (SC-88) plastic package. The transistors in the SOT363 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.98 complement: PMP4201Y-Q... | |
| NPN/NPN matched double transistor in a very small Surface-Mounted Device (SMD) SOT363 (SC-88) plastic package. The transistors in the SOT363 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.98 complement: PMP4201Y... | |
| NPN/NPN matched double transistor in a very small Surface-Mounted Device (SMD) SOT363 (SC-88) plastic package. NPN/NPN hFE1/hFE2 0.95 complement: PMP4501Y PNP/PNP complement: PMP5201Y Features and benefits Current gain matching Base-emitter... | |
| NPN/NPN matched double transistor in an ultra small Surface-Mounted Device (SMD) plastic package. The transistors in the SOT666 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.95 complement: PMP4501V PNP/PNP complement:... | |
| NPN/NPN matched double transistor in an ultra small Surface-Mounted Device (SMD) plastic package. The transistors in the SOT666 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.98 complement: PMP4201V PNP/PNP complement:... | |
| NPN/NPN matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PMP5501QAS Features and benefits Reduces component count Reduces pick and place costs... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.5 kV ESD protection (human... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 2.4 kV ESD protected Small... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Side wettable... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless ultra small package; | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low leakage current Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 3 kV ESD protected Trench MOSFET technology... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Very fast... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range T... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Very... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very fast switching Enhanced... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Fast switching Trench MOSFET technology 2 kV... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Very fast... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low RDSon Very fast switching Trench... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range T... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Logic-level compatible Very fast... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small TO-236AB (SOT23-1) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V RDSon rated Very fast... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching... | |
| PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. Features and benefits High current (max. 1 A) Low collector-emitter saturation voltage ensures reduced power... | |
| PNP high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA42-Q Features and benefits Very small package High voltage Qualified according to AEC-Q101 and... | |
| PNP high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA42 Features and benefits Very small package High voltage Applications Primarily intended for use... | |
| PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904-Q Features and benefits Collector current: IC ≤ -200 mA Collector-emitter voltage: V... | |
| PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904 Features and benefits Collector current: IC ≤ -200 mA Collector-emitter voltage: V... | |
| PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits General purpose switching transistor Qualified according to AEC-Q101 and recommended for use in... | |
| PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMST2222A Features and benefits General purpose switching transistor Applications Switching and linear amplification | |
| PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMST4401-Q Features and benefits General purpose switching transistor Qualified according to AEC-Q101 and recommended... | |
| PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMST4401 Features and benefits General purpose switching transistor Applications Switching and linear amplification | |
| PNP switching transistor in an SOT323 (SC-70) plastic package. NPN complement: PMSS3904. Features and benefits Low current (max. 100 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Switching, e.g. | |
| PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA05-Q Features and benefits High current (max. 500 mA) Collector-emitter voltage: 60 V Qualified according... | |
| PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA05 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 60 V AEC-Q101 qualified... | |
| PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA06-Q Features and benefits High current (max. 500 mA) Collector-emitter voltage: 80 V Qualified according... | |
| PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA06 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 80 V AEC-Q101 qualified... | |
| PNP/PNP matched double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Features and benefits Current gain matching Base-emitter voltage matching Application-optimize d pinout Applications Current mirror... | |
| PNP/PNP matched double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Features and benefits Current gain matching Base-emitter voltage matching Application-optimize d pinout Qualified according to... | |
| PNP/PNP matched double transistor in a very small SOT353 (SC-88A) Surface-Mounted Device (SMD) plastic package. PNP/PNP hFE1/hFE2 0.95 complement: PMP5501G NPN/NPN complement: PMP4201G Features and benefits Current... | |
| PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Current gain matching Base-emitter voltage matching Application-optimize d pinout Qualified according to... | |
| PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP hFE1/hFE2 0.95 complement: PMP5501Y NPN/NPN complement: PMP4201Y Features and benefits Current... | |
| PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP hFE1/hFE2 0.98 complement: PMP5201Y-Q NPN/NPN complement: PMP4501Y-Q Features and benefits Current gain matching Base-emitter... | |
| PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP hFE1/hFE2 0.98 complement: PMP5201Y NPN/NPN complement: PMP4501Y Features and benefits Current gain matching Base-emitter... | |
| PNP/PNP matched double transistor in an ultra small flat lead Surface-Mounted Device (SMD) SOT666 plastic package. The transistors in the SOT666 package are fully isolated internally. PNP/PNP hFE1/h... | |
| PNP/PNP matched double transistor in an ultra small Surface-Mounted Device (SMD) plastic package. The transistors in the SOT666 package are fully isolated internally. PNP/PNP hFE1/hFE2 0.98 complement: PMP5201V NPN/NPN complement:... | |
| PNP/PNP matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMP4501QAS Features and benefits Reduces component count Reduces pick and place costs... | |
| Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra... |
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