Nexperia B.V. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits 500 mA output current capability Built-in bias resistors... | |
| 500 mA, 50 V NPN/PNP double Resistor-Equipped Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits 500 mA output current capability Built-in bias resistors... | |
| 500 mA, 50 V NPN/PNP double Resistor-Equipped Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN31 Features and benefits 500 mA output current capability... | |
| Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low leakage current Trench... | |
| Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very... | |
| Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very... | |
| Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology... | |
| Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching... | |
| Double NPN switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. Double PNP complement: PMBT2907AYS Features and benefits Double general-purpose switching transistor High current (max. 600... | |
| Double NPN switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. Double PNP complement: PMBT4403YS Features and benefits Double general-purpose switching transistor High current (max. 600... | |
| Double NPN switching transistor in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. Features and benefits Leadless ultra small SMD plastic package Reduces component count Reduces pick... | |
| Double PNP switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. Double NPN complement: PMBT2222AYS Features and benefits Double general-purpose switching transistor AEC-Q101 qualified Applications Switching... | |
| Double PNP switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. Double NPN complement: PMBT4401YS Features and benefits Double general-purpose switching transistor AEC-Q101 qualified Applications Switching... | |
| Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching... | |
| Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. Features and benefits Dual device Fast switching Footprint 40 % smaller... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low leakage current Trench... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Leadless... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching... | |
| Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching... | |
| Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage... | |
| Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching... | |
| Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and... | |
| Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.78 × | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.78 x... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 × | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Logic-level compatible Very fast... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Extended temperature range T... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj =... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching... | |
| N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage... | |
| NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. Features and benefits High current (max. 1 A) Low collector-emitter saturation voltage ensures reduced power... | |
| NPN Darlington transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA64 Features and benefits High current (max. 500 mA) Low voltage (max. 30 V) High DC... | |
| NPN general-purpose transistor encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA56-Q Features and benefits High current (max. 500 mA) Low voltage (max. 80 V) Qualified... | |
| NPN general-purpose transistor encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA56 Features and benefits High current (max. 500 mA) Low voltage (max. 80 V) Applications... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60610PY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60610PY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYCLH Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 400 V) Applications... | |
| NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 400 V) Qualified... | |
| NPN high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current capability... | |
| NPN high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9050T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High... | |
| NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 140 V) AEC-Q101 qualified Applications General... | |
| NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Qualified according to AEC-Q101... | |
| NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage (max. 300 V) Qualified according to AEC-Q101 and recommended for use in automotive... | |
| NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 140 V) Qualified according to AEC-Q101 and... | |
| NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92 Features and benefits High voltage (max. 300 V) AEC-Q101 qualified Applications Telephony and professional communication... | |
| NPN high-voltage transistor in a SOT23 plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Applications General purpose | |
| NPN single switching transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT3906MB. Features and benefits Single general-purpose switching transistor Ultra small SMD plastic... | |
| NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT3906M Features and benefits Single general-purpose switching transistor Board-space reduction Ultra small... | |
| NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 30 V) AEC-Q101 qualified Applications Switching... | |
| NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) AEC-Q101 qualified Applications Switching... | |
| NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO = 40 V... | |
| NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT2907A-Q Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) Qualified according... | |
| NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT3906 Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO... | |
| NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT4403-Q Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) Qualified according... | |
| NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT4403 Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) Applications Industrial... | |
| NPN switching transistor in a SOT23 plastic package. Features and benefits Low current (max. 200 mA) Low voltage (max. 15 V). AEC-Q101 qualified Applications High-speed switching, especially in portable equipment. | |
| NPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT2907AM Features and benefits High current (max. 600 mA) Low voltage (max. 40V)... | |
| NPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT2907AMB Features and benefits High current (max. 600 mA) Low voltage (max. 40V)... | |
| NPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits Leadless ultra small SMD plastic package... | |
| NPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PMBT2907AQA Features and benefits High current (max. | |
| NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) AEC-Q101 qualified Applications General purpose switching... | |
| NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Qualified according to AEC-Q101 and recommended... | |
| NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 50 V) Applications General purpose switching and amplification... | |
| NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 50 V) Qualified according to AEC-Q101 and recommended... | |
| NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBS3906 Features and benefits Low current (max. 100 mA) Low voltage (max. 40 V) Applications General-purpose switching... | |
| NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBS3906 Features and benefits Low current (max. 100 mA) Low voltage (max. 40 V) Qualified according to... | |
| NPN/NPN double Resistor-Equipped Transistors (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces... | |
| NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Double general-purpose switching transistor Board-space reduction Ultra small and flat... | |
| NPN/NPN general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose double transistor Board-space reduction Applications General-purpose switching and amplification | |
| NPN/NPN general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose double transistor Board-space reduction Qualified according to AEC-Q101 and recommended for... | |
| NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK-Q. PNP/PNP complement: PHPT610035PK-Q NPN/PNP complement: PHPT610035NPK-Q Features and benefits Current... | |
| NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK NPN/PNP complement: PHPT610035NPK Features and benefits Current... | |
| NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up... | |
| NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK NPN/PNP complement: PHPT610030NPK Features and benefits High thermal power dissipation capability... | |
| NPN/NPN high-voltage double transistor in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Features and benefits High breakdown voltage Two electrically isolated transistor Small SMD plastic package Applications... | |
| NPN/NPN high-voltage double transistor in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Features and benefits High breakdown voltage Two electrically isolated transistor Small SMD plastic package Qualified... | |
| NPN/NPN matched double transistor in a very small SOT353 (SC-88A) Surface-Mounted Device (SMD) plastic package. The transistors in the SOT353 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.95 complement: PMP4501G... | |
| NPN/NPN matched double transistor in a very small Surface-Mounted Device (SMD) SOT363 (SC-88) plastic package. The transistors in the SOT363 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.98 complement: PMP4201Y-Q... | |
| NPN/NPN matched double transistor in a very small Surface-Mounted Device (SMD) SOT363 (SC-88) plastic package. The transistors in the SOT363 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.98 complement: PMP4201Y... | |
| NPN/NPN matched double transistor in a very small Surface-Mounted Device (SMD) SOT363 (SC-88) plastic package. NPN/NPN hFE1/hFE2 0.95 complement: PMP4501Y PNP/PNP complement: PMP5201Y Features and benefits Current gain matching Base-emitter... | |
| NPN/NPN matched double transistor in an ultra small Surface-Mounted Device (SMD) plastic package. The transistors in the SOT666 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.95 complement: PMP4501V PNP/PNP complement:... | |
| NPN/NPN matched double transistor in an ultra small Surface-Mounted Device (SMD) plastic package. The transistors in the SOT666 package are fully isolated internally. NPN/NPN hFE1/hFE2 0.98 complement: PMP4201V PNP/PNP complement:... | |
| NPN/NPN matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PMP5501QAS Features and benefits Reduces component count Reduces pick and place costs... | |
| NPN/NPN Resistor-Equipped double Transistor (RET) in a medium power SOT1118 (DFN2020-6) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PIMC31PA PNP/PNP complement: PIMP31PA Features and benefits 500 mA output current... | |
| NPN/NPN Resistor-Equipped double Transistor (RET) in a medium power SOT1118 (DFN2020-6) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PIMC32PA PNP/PNP complement: PIMP32PA Features and benefits 500 mA output current... | |
| NPN/NPN Resistor-Equipped double Transistor (RET) in a medium power SOT1118D (DFN2020D-6) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks (SWF). NPN/PNP complement: PIMC31PAS-Q PNP/PNP complement: PIMP31PAS-Q Features and benefits... | |
| NPN/NPN Resistor-Equipped double Transistor (RET) in a medium power SOT1118D (DFN2020D-6) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks (SWF). NPN/PNP complement: PIMC32PAS-Q PNP/PNP complement: PIMP32PAS-Q Features and benefits... | |
| NPN/NPN Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PIMP32-Q NPN/PNP complement: PIMC32-Q Features and benefits 500 mA output current capability Built-in... | |
| NPN/NPN Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PIMP32 NPN/PNP complement: PIMC32 Features and benefits 500 mA output current capability Built-in... | |
| NPN/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMBT3904VS PNP/PNP complement: PMBT3906VS Features and benefits Double general-purpose switching transistor... | |
| NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMBT3904YS-Q PNP/PNP complement: PMBT3906YS-Q Features and benefits General-purpose double transistor Board-space reduction Qualified... | |
| NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMBT3904YS PNP/PNP complement: PMBT3906YS Features and benefits General-purpose double transistor Board-space reduction AEC-Q101... | |
| NPN/PNP general-purpose double transistors in a very small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits Simplified circuit design Reduced component count Reduced pick and place costs AEC-Q101... | |
| NPN/PNP general-purpose double transistors in a very small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits Simplified circuit design Reduced component count Reduced pick and place costs Qualified... | |
| NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK-Q PNP/PNP complement: PHPT610030PK-Q Features and benefits High thermal power dissipation capability... | |
| NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK PNP/PNP complement: PHPT610030PK Features and benefits High thermal power dissipation capability... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a medium power SOT1118 (DFN2020-6) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN31PA PNP/PNP complement: PIMP31PA Features and benefits 500 mA output current... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a medium power SOT1118 (DFN2020-6) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32PA PNP/PNP complement: PIMP32PA Features and benefits 500 mA output current... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a medium power SOT1118D (DFN2020D-6) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks (SWF). NPN/NPN complement: PIMN31PAS-Q PNP/PNP complement: PIMP31PAS-Q Features and benefits... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a medium power SOT1118D (DFN2020D-6) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks (SWF). NPN/NPN complement: PIMN32PAS-Q PNP/PNP complement: PIMP32PAS-Q Features and benefits... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32-Q PNP/PNP complement: PIMP32-Q Features and benefits 500 mA output current capability Built-in... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32 PNP/PNP complement: PIMP32 Features and benefits 500 mA output current capability Built-in... | |
| NPN/PNP Resistor-Equipped Transistors (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component... | |
| NPN/PNP switching double transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMBT2222AYS PNP/PNP complement: PMBT2907AYS Features and benefits Double general-purpose switching transistor High current... | |
| NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat Breakthrough In Small Signal (BISS) transistors in push-pull... | |
| NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits Switching transistors in push-pull configuration Application-optimize d pinout Space-saving solution Internal... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package 0.78 x... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.78 × | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 × | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 x... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Fast switching Trench MOSFET technology 2 kV... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Very fast... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low RDSon Very fast switching Trench... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range T... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Logic-level compatible Very fast... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low RDSon Very fast switching Trench... | |
| P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching... | |
| PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. Features and benefits High current (max. 1 A) Low collector-emitter saturation voltage ensures reduced power... | |
| PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBS3904 Features and benefits 100 mA collector current capability Applications General-purpose switching and amplification | |
| PNP general-purpose transistor in a small SOT23 plastic package. NPN complement: PMBTA06. Features and benefits High current (max. 500 mA) Low voltage (max. 80 V). Applications General purpose switching and... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY. Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60610NY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60610NY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYCLH. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY-Q Features and benefits High thermal power dissipation capability High temperature applications up... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY Features and benefits High thermal power dissipation capability High temperature applications up... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY-Q Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. Features and benefits High thermal power dissipation capability Suitable for high temperature... | |
| PNP high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA06-Q Features and benefits High current (max. 500 mA) Low voltage (max. 80 V) Qualified... | |
| PNP high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA42-Q Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Qualified... | |
| PNP high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA42 Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Applications Telephony... | |
| PNP single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904M. Features and benefits Single general-purpose switching transistor Board-space reduction AEC-Q101 qualified... | |
| PNP switching transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. Features and benefits Single general-purpose switching transistor Ultra small SMD plastic package Board-space reduction Low... | |
| PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222 60V variant: PMBT2907A Features and benefits Single general-purpose switching transistor AEC-Q101 qualified Applications Switching... | |
| PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222A 40V variant: PMBT2907 Features and benefits Single general-purpose switching transistor AEC-Q101 qualified Applications Switching... | |
| PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Collector-emitter voltage VCEO = 40 V Qualified according to... | |
| PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222A-Q Features and benefits Single general-purpose switching transistor Qualified according to AEC-Q101 and recommended for use... | |
| PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT4401 Features and benefits High current (max. 600 mA) Collector-emitter voltage VCEO = 40 V... | |
| PNP switching transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904-Q Features and benefits Collector-emitter voltage VCEO = - 40 V Collector-current capability IC... | |
| PNP switching transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904 Features and benefits Collector-emitter voltage VCEO = - 40 V Collector-current capability IC... | |
| PNP switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222AM Features and benefits High current (max. 600 mA) Low voltage (max. 60... | |
| PNP switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222AMB Features and benefits High current (max. 600 mA) Low voltage (max. 60V)... | |
| PNP switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PMBT2222AQA Features and benefits High current (max. | |
| PNP transistor pair in an SC-74 (SOT457) plastic package. Features and benefits 600 mW total power dissipation Low current (max. 100 mA) Low voltage (max. 40 V) Reduces number of... | |
| PNP/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMBT3904VS NPN/PNP complement: PMBT3946VPN Features and benefits Double general-purpose switching transistor... | |
| PNP/PNP general-purpose double transistor in a SOT363 (SC-88) a very small Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMBT3904YS-Q NPN/PNP complement: PMBT3946YPN-Q Features and benefits General-purpose double transistor Board-space reduction... | |
| PNP/PNP general-purpose double transistor in a SOT363 (SC-88) a very small Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMBT3904YS NPN/PNP complement: PMBT3946YPN Features and benefits General-purpose double transistor Board-space reduction... | |
| PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK-Q NPN/PNP complement: PHPT610030NPK Features and benefits High thermal power dissipation capability... | |
| PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK NPN/PNP complement: PHPT610030NPK Features and benefits High thermal power dissipation capability... | |
| PNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030PK-Q. NPN/NPN complement: PHPT610035NK-Q. Features and benefits Current gain matching... | |
| PNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030PK. NPN/NPN complement: PHPT610035NK. Features and benefits Current gain matching... | |
| PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN. Features and benefits... | |
| PNP/PNP matched double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Features and benefits Current gain matching Base-emitter voltage matching Application-optimize d pinout Applications Current mirror... | |
| PNP/PNP matched double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Features and benefits Current gain matching Base-emitter voltage matching Application-optimize d pinout Qualified according to... | |
| PNP/PNP matched double transistor in a very small SOT353 (SC-88A) Surface-Mounted Device (SMD) plastic package. PNP/PNP hFE1/hFE2 0.95 complement: PMP5501G NPN/NPN complement: PMP4201G Features and benefits Current... | |
| PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Current gain matching Base-emitter voltage matching Application-optimize d pinout Qualified according to... | |
| PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP hFE1/hFE2 0.95 complement: PMP5501Y NPN/NPN complement: PMP4201Y Features and benefits Current... | |
| PNP/PNP matched double transistor in an ultra small flat lead Surface-Mounted Device (SMD) SOT666 plastic package. The transistors in the SOT666 package are fully isolated internally. PNP/PNP hFE1/h... | |
| PNP/PNP Resistor-Equipped double Transistor (RET) in a medium power SOT1118 (DFN2020-6) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN31PA NPN/PNP complement: PIMC31PA Features and benefits 500 mA output current... | |
| PNP/PNP Resistor-Equipped double Transistor (RET) in a medium power SOT1118 (DFN2020-6) leadless Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32PA NPN/PNP complement: PIMC32PA Features and benefits 500 mA output current... | |
| PNP/PNP Resistor-Equipped double Transistor (RET) in a medium power SOT1118D (DFN2020D-6) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks (SWF). NPN/NPN complement: PIMN31PAS-Q NPN/PNP complement: PIMC31PAS-Q Features and benefits... | |
| PNP/PNP Resistor-Equipped double Transistor (RET) in a medium power SOT1118D (DFN2020D-6) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks (SWF). NPN/NPN complement: PIMN32PAS-Q NPN/PNP complement: PIMC32PAS-Q Features and benefits... | |
| PNP/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN31 NPN/PNP complement: PIMC31 Features and benefits 500 mA output current capability Built-in... | |
| PNP/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32-Q NPN/PNP complement: PIMC32-Q Features and benefits 500 mA output current capability Built-in... | |
| PNP/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32 NPN/PNP complement: PIMC32 Features and benefits 500 mA output current capability Built-in... | |
| Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications... |
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