N-channel 80 V, 25 mΩ logic level MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology, designed for power supply and motor control applications. The device features a drain-source on-state resistance of 22.2 mΩ to 27 mΩ at VGS = 5 V and ID = 10 A, a continuous drain current of 37 A at 25 °C, and a total power dissipation of 95 W. It is avalanche rated with 45.4 mJ non-repetitive drain-source avalanche energy, and supports logic level gate operation. The LFPAK56 package provides high power density in a Surface-Mounted SO8 configuration.
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.
Features and benefits
Applications
N-Channel 80V 37A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 80V 37A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 80V 37A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8
PSMN025-80YL - N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: PSMN025-80YLX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PSMN025-80YLX can be used for catalog matching and distributor lookup.
MOSFET PSMN025-80YL/LFPAK/R
MOSFET N-CH 80V 37A LFPAK56
MOSFET N-CH 80V 37A LFPAK56
MOSFET, N-CH, 80V, 37A, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0205ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PSMN025-80YLX | 1727-2594-1-ND | 278-PSMN025-80YLX | PSMN025-80YLX | PSMN025-80YLX | PSMN025-80YLX | 96Y9586 |
| Product Name | N-channel 80 V, 25 mOhm logic level MOSFET in LFPAK56 | Single FETs, MOSFETs | N-Channel 80 V SOIC MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 80V, 37A, Sot-669-4; Transistor Polarity Nexperia |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 80 volts | 80 volts | |||||
| IDSS | 37000 milliamps | 37000 milliamps | 37000 milliamps | ||||
| VGS(off) | 20 volts | ||||||
| PD | 95 milliwatts | 95000 milliwatts |
