P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET P-CH 60V 2.2A TO236AB Product overview: PMV100EPAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV100EPAR can be used for catalog matching and distributor lookup.
P-Channel 60V 2.2A (Ta) 710mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
P-Channel 60V 2.2A (Ta) 710mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
P-Channel 60V 2.2A (Ta) 710mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 890104-PMV100EPAR
Series: Automotive, AEC-Q101, TrenchMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 60 V 2.2A (Ta) 710mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: PMV100
Categories: Discrete Semiconductor Products
Case / Package: TO-236AB
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
HTSUS: 8541.29.0095
Other Part Number: 1727-PMV100EPARDKR, 934661097215, 1727-PMV100EPARCT, 1727-PMV100EPARTR
MOSFET, P-CH, 60V, 2.2A, SOT-23 ROHS COMPLIANT: YES
MOSFET P-CH 60V 2.2A TO236AB
MOSFET P-CH 60V 2.2A TO236AB
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMV100EPAR | 278-PMV100EPAR | 1727-PMV100EPARTR-ND | 890104-PMV100EPAR | 71AH5495 | PMV100EPAR | PMV100EPAR |
| Product Name | 60 V, P-channel Trench MOSFET | 60V 2.2A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV100EPAR | Mosfet, P-Ch, 60V, 2.2A, Sot-23 Rohs Compliant Nexperia | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | -60 volts | 60 volts | 60 volts | ||||
| IDSS | -2200 milliamps | 2200 milliamps | |||||
| VGS(off) | 20 volts | ||||||
| PD | 710 milliwatts | 1.3 milliwatts | 710 milliwatts |
