N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 100V 1.5A (Ta) 770mW (Ta) Surface Mount SOT-223
N-Channel 100V 1.5A (Ta) 770mW (Ta) Surface Mount SOT-223
N-Channel 100V 1.5A (Ta) 770mW (Ta) Surface Mount SOT-223
Win Source Part Number: 1085725-PMT280ENEAX
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 770mW (Ta)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Nexperia USA Inc.
Other Names: 934068623115,568-132
Base Product Number: PMT280
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 100V 1.5A SOT223
PMT280ENEA - 100 V N-channel Trench MOSFET SC-73 4-Pin Product overview: PMT280ENEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMT280ENEAX can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 1.5A SOT223
MOSFET PMT280ENEA/SC-73/REE
MOSFET, AEC-Q101, N-CH, 100V, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.285ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMT280ENEAX | 1727-2724-2-ND | 1085725-PMT280ENEAX | PMT280ENEAX | 278-PMT280ENEAX | PMT280ENEAX | PMT280ENEAX | 69AC3133 |
| Product Name | 100 V N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | N-Channel 100 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 100V, Sot-223; Transistor Polarity Nexperia |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 1500 milliamps | 1500 milliamps | 1500 milliamps | |||||
| VGS(off) | 1.7 volts |
