N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 30V 10A DFN2020MD-6 Product overview: PMPB10ENZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB10ENZ can be used for catalog matching and distributor lookup.
PMPB10EN - 30 V, N-channel MOSFET
N-Channel 30V 10A (Ta) 1.8W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
Win Source Part Number: 971218-PMPB10ENZ
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 12.5W (Tc)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 934660554184
Base Product Number: PMPB10
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 30V 10A DFN2020MD-6
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMPB10ENZ | 278-PMPB10ENZ | PMPB10ENZ | PMPB10ENZ-ND | 971218-PMPB10ENZ | PMPB10ENZ | PMPB10ENZ |
| Product Name | 30 V, N-channel MOSFET | 30V 10A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| Package Type | SOT1220-4 | Tape & Reel (TR) | SOT1220 | 6-UDFN Exposed Pad | SOT3 | 6-UDFN Exposed Pad | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts |