Nexperia B.V. 30 V, N-channel MOSFET PMPB10ENZ

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench Superjunction Technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Side wettable flanks for optional solder inspection Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench Superjunction Technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Side wettable flanks for optional solder inspection Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel MOSFET - PMPB10ENZ - Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel MOSFET
PMPB10ENZ
30 V, N-channel MOSFET PMPB10ENZ
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench Superjunction Technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Side wettable flanks for optional solder inspection Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Very fast switching
  • Trench Superjunction Technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Side wettable flanks for optional solder inspection

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portables
  • Hard disk and computing power management
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB10ENZTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB10ENZTR-ND
Single FETs, MOSFETs 1727-PMPB10ENZTR-ND
N-Channel 30V 10A (Ta) 1.8W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

N-Channel 30V 10A (Ta) 1.8W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

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Single FETs, MOSFETs - 1727-PMPB10ENZDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB10ENZDKR-ND
Single FETs, MOSFETs 1727-PMPB10ENZDKR-ND
MOSFET N-CH 30V 10A DFN2020MD-6

MOSFET N-CH 30V 10A DFN2020MD-6

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Single FETs, MOSFETs - 1727-PMPB10ENZCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB10ENZCT-ND
Single FETs, MOSFETs 1727-PMPB10ENZCT-ND
MOSFET N-CH 30V 10A DFN2020MD-6

MOSFET N-CH 30V 10A DFN2020MD-6

Buy Now Datasheet
Singapore
30V 10A MOSFET Transistor
278-PMPB10ENZ
30V 10A MOSFET Transistor 278-PMPB10ENZ
MOSFET N-CH 30V 10A DFN2020MD-6 Product overview: PMPB10ENZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB10ENZ can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 10A DFN2020MD-6 Product overview: PMPB10ENZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMPB10ENZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - PMPB10ENZ - Rochester Electronics
Newburyport, MA, United States
PMPB10EN - 30 V, N-channel MOSFET

PMPB10EN - 30 V, N-channel MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 971218-PMPB10ENZ - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
971218-PMPB10ENZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 971218-PMPB10ENZ
Win Source Part Number: 971218-PMPB10ENZ Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.8W (Ta), 12.5W (Tc) Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020MD-6 Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Other Names: 934660554184 Base Product Number: PMPB10 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 971218-PMPB10ENZ
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 12.5W (Tc)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 934660554184
Base Product Number: PMPB10
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB10ENZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB10ENZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB10ENZ
MOSFET N-CH 30V 10A DFN2020MD-6

MOSFET N-CH 30V 10A DFN2020MD-6

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30 V, N-channel MOSFET

MOSFET 30 V, N-channel MOSFET

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Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMPB10ENZ 1727-PMPB10ENZTR-ND 278-PMPB10ENZ PMPB10ENZ 971218-PMPB10ENZ PMPB10ENZ PMPB10ENZ
Product Name 30 V, N-channel MOSFET Single FETs, MOSFETs 30V 10A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 30 volts 30 volts
IDSS 14000 milliamps
VGS(off) 20 volts
PD 1.8 milliwatts 3.5 milliwatts 1800 to 12500 milliwatts
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