N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089787-PMV30UN2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 490mW (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.2A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 11nC @ 4.5V
Max Input Capacitance: 655pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 32 mOhm @ 4.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
N-Channel 20V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB
N-Channel 20V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB
N-Channel 20V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB
MOSFET N-CH 20V 4.2A TO236AB
MOSFET 20V N-channel Trench MOSFET
MOSFET, N-CH, 20V, 4.2A, 0.49W, TO-236AB; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:650mV RoHS Compliant: Yes
MOSFET N-CH 20V 4.2A TO236AB
| Nexperia B.V. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMV30UN2R | 1089787-PMV30UN2R | 1727-2305-6-ND | PMV30UN2R | PMV30UN2R | 43AC0277 | PMV30UN2R |
| Product Name | 20 V, N-channel Trench MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV30UN2R | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 20V, 4.2A, 0.49W, To-236Ab; Channel Type Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| IDSS | 5400 milliamps | 4200 milliamps | 4200 milliamps | ||||
| VGS(off) | 0.6500 volts |
