P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089798-PMV48XPAR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 510mW (Ta), 4.15W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 1.25V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Max Input Capacitance: 1000pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 55 mOhm @ 2.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
PMV48XPA - 20 V, P-channel Trench MOSFET TO-236 3-Pin Product overview: PMV48XPAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV48XPAR can be used for catalog matching and distributor lookup.
P-Channel 20V 3.5A (Ta) 510mW (Ta), 4.15W (Tc) Surface Mount TO-236AB
P-Channel 20V 3.5A (Ta) 510mW (Ta), 4.15W (Tc) Surface Mount TO-236AB
P-Channel 20V 3.5A (Ta) 510mW (Ta), 4.15W (Tc) Surface Mount TO-236AB
PMV48XPA - 20 V, P-CHANNEL TRENC
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
MOSFET 20V P-channel Trench MOSFET
MOSFET P-CH 20V 3.5A TO236AB
| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMV48XPAR | 1089798-PMV48XPAR | 278-PMV48XPAR | 1727-PMV48XPARTR-ND | PMV48XPAR | 97Y9469 | PMV48XPAR | PMV48XPAR |
| Product Name | 20 V, P-channel Trench MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV48XPAR | P-Channel 20 V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -20V, Sot-23-3; Transistor Polarity Nexperia | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | -20 volts | 20 volts | 20 volts | |||||
| IDSS | -3500 milliamps | 3500 milliamps | -3500 milliamps | |||||
| VGS(off) | 12 volts | |||||||
| PD | 510 milliwatts | 510 to 4150 milliwatts | 510 milliwatts |
